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    NITRIDE BASED SEMICONDUCTOR LASER DEVICE
    1.
    发明申请
    NITRIDE BASED SEMICONDUCTOR LASER DEVICE 有权
    基于氮化物的半导体激光器件

    公开(公告)号：US20090086783A1

    公开(公告)日：2009-04-02

    申请号：US12236616

    申请日：2008-09-24

    申请人： Shingo KAMEYAMA ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

    发明人： Shingo KAMEYAMA ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

    IPC分类号： H01S5/026

    CPC分类号： H01S5/32341 ,  H01S5/028 ,  H01S5/0282

    摘要： One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.

    摘要翻译： 氮化物基半导体激光器件的一个面由（0001）的解理面构成，其另一个面由（000

    NITRIDE BASED SEMICONDUCTOR LASER DEVICE
    2.
    发明申请
    NITRIDE BASED SEMICONDUCTOR LASER DEVICE 审中-公开
    基于氮化物的半导体激光器件

    公开(公告)号：US20110200065A1

    公开(公告)日：2011-08-18

    申请号：US13040798

    申请日：2011-03-04

    申请人： Shingo KAMEYAMA ,  Yasuhiko NOMURA ,  Ryoji HIROYAMA ,  Masayuki HATA

    发明人： Shingo KAMEYAMA ,  Yasuhiko NOMURA ,  Ryoji HIROYAMA ,  Masayuki HATA

    IPC分类号： H01S5/028

    CPC分类号： H01S5/32341 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/1082 ,  H01S5/227 ,  H01S5/3202 ,  H01S2301/176

    摘要： One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.

    摘要翻译： 氮化物基半导体激光器件的一个面和另一个面分别由（0001）的解理面和（000 1）的解理面构成。 因此，一个面和另一个面分别是Ga极平面和N极平面。 位于光波导中的一个面和另一个面的一部分的一部分构成一对腔面。 在一个面上形成包括氧作为构成元素的第一保护膜。 在另一方面形成包括氮作为构成元素的第二保护膜。