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    SEMICONDUCTOR LASER
    1.
    发明申请
    SEMICONDUCTOR LASER 审中-公开

    公开(公告)号：US20190013649A1

    公开(公告)日：2019-01-10

    申请号：US15752442

    申请日：2016-09-27

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Clemens Vierheilig ,  Andreas Löffler

    IPC: H01S5/323 ,  H01S5/028 ,  H01S5/10 ,  H01S5/22

    CPC classification number: H01S5/323 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/0425 ,  H01S5/1082 ,  H01S5/16 ,  H01S5/162 ,  H01S5/166 ,  H01S5/22 ,  H01S5/221

    Abstract: A semiconductor laser includes a semiconductor layer sequence having an n-conducting n-region, a p-conducting p-region and an intermediate active zone, an electrically conductive p-contact layer that impresses current directly into the p-region and is made of a transparent conductive oxide, and an electrically conductive and metallic p-contact structure located directly on the p-contact layer, wherein the semiconductor layer sequence includes two facets forming resonator end faces for the laser radiation, in at least one current-protection region directly on at least one of the facets a current impression into the p-region is suppressed, the p-contact structure terminates flush with the associated facet so that the p-contact structure does not protrude beyond the associated facet and vice versa, and the p-contact layer is removed from at least one of the current-protection regions and in this current-protection region the p-contact structure is in direct contact with the p-region over the whole area.

    Laser light source
    6.
    发明授权
    Laser light source 有权
    激光光源

    公开(公告)号：US09559497B2

    公开(公告)日：2017-01-31

    申请号：US14951220

    申请日：2015-11-24

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Alfred Lell ,  Christoph Eichler ,  Wolfgang Schmid ,  Soenke Tautz ,  Wolfgang Reill ,  Dimitri Dini

    IPC: H01S5/00 ,  H01S5/10 ,  H01S5/028 ,  H01S5/22

    CPC classification number: H01S5/1082 ,  H01S5/0078 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0286 ,  H01S5/1017 ,  H01S5/105 ,  H01S5/1078 ,  H01S5/1092 ,  H01S5/22 ,  H01S2301/02 ,  H01S2301/166

    Abstract: A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction. The at least one filter element comprises a surface structure comprising a roughening and/or at least one layer comprising a non-transparent material.

    Abstract translation: 一种激光源，包括具有有源区的半导体层序列和具有第一和第二部分区域的辐射耦合输出区域和滤波器结构。 有源区产生相干的第一电磁辐射和非相干的第二电磁辐射。 相干第一电磁辐射沿着发射方向由第一部分区域发射，并且非相干的第二电磁辐射由第一部分区域和第二部分区域发射。 滤波器结构至少部分地衰减沿着发射方向发射的非相干的第二电磁辐射。 滤波器结构具有布置在半导体层序列的具有平行于发射方向的延伸方向的区域上的至少一个滤波器元件。 所述至少一个过滤元件包括表面结构，所述表面结构包括粗糙化和/或至少一层包含不透明材料的层。

    Edge emitting semiconductor laser
    7.
    发明授权
    Edge emitting semiconductor laser 有权
    边缘发射半导体激光器

    公开(公告)号：US09559494B2

    公开(公告)日：2017-01-31

    申请号：US14805808

    申请日：2015-07-22

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Christian Lauer ,  Alvaro Gomez-Iglesias

    IPC: H01S5/20 ,  H01S5/10 ,  H01S5/042 ,  H01S5/065 ,  H01S5/40 ,  H01S5/32

    CPC classification number: H01S5/0655 ,  H01S5/02284 ,  H01S5/0425 ,  H01S5/10 ,  H01S5/1082 ,  H01S5/2004 ,  H01S5/2018 ,  H01S5/2036 ,  H01S5/2081 ,  H01S5/2086 ,  H01S5/209 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/323 ,  H01S5/4031 ,  H01S2301/166 ,  H01S2301/176 ,  H01S2301/18

    Abstract: An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, the waveguide region including first and second waveguide layers and an active layer arranged between the first and second waveguide layers, that generates laser radiation; the waveguide region is arranged between a first and second cladding layers disposed downstream of the waveguide region; a phase structure for selection of lateral modes of the laser radiation emitted by the active layer, wherein the phase structure includes at least one cutout extending from a top side of the semiconductor body into the second cladding layer; at least one first intermediate layer composed of a semiconductor material different from that of the second cladding layer embedded into the second cladding layer; and the cutout at least partly extends from the top side into the first intermediate layer; the second cladding layer contains a first partial layer adjoining the waveguide region.

    Abstract translation: 边缘发射半导体激光器包括：半导体本体，其包括波导区域，波导区域包括第一和第二波导层以及布置在第一和第二波导层之间的有源层，其产生激光辐射; 波导区域布置在布置在波导区域下游的第一和第二覆层之间; 用于选择由有源层发射的激光辐射的横向模式的相位结构，其中所述相位结构包括从所述半导体主体的顶侧延伸到所述第二覆层中的至少一个切口; 至少一个第一中间层，由与第二包覆层嵌入的第二包覆层不同的半导体材料构成; 并且所述切口至少部分地从所述顶侧延伸到所述第一中间层中; 第二包层包含邻接波导区域的第一部分层。

    Laser Light Source
    8.
    发明申请
    Laser Light Source 有权
    激光光源

    公开(公告)号：US20160079734A1

    公开(公告)日：2016-03-17

    申请号：US14951220

    申请日：2015-11-24

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Alfred LELL ,  Christoph EICHLER ,  Wolfgang SCHMID ,  Soenke TAUTZ ,  Wolfgang REILL ,  Dimitri DINI

    IPC: H01S5/10 ,  H01S5/028 ,  H01S5/22 ,  H01S5/00

    CPC classification number: H01S5/1082 ,  H01S5/0078 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0286 ,  H01S5/1017 ,  H01S5/105 ,  H01S5/1078 ,  H01S5/1092 ,  H01S5/22 ,  H01S2301/02 ,  H01S2301/166

    Abstract: A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction. The at least one filter element comprises a surface structure comprising a roughening and/or at least one layer comprising a non-transparent material.

    Abstract translation: 一种激光源，包括具有有源区的半导体层序列和具有第一和第二部分区域的辐射耦合输出区域和滤波器结构。 有源区产生相干的第一电磁辐射和非相干的第二电磁辐射。 相干第一电磁辐射沿着发射方向由第一部分区域发射，并且非相干的第二电磁辐射由第一部分区域和第二部分区域发射。 滤波器结构至少部分地衰减沿着发射方向发射的非相干的第二电磁辐射。 滤波器结构具有布置在半导体层序列的具有平行于发射方向的延伸方向的区域上的至少一个滤波器元件。 所述至少一个过滤元件包括表面结构，所述表面结构包括粗糙化和/或至少一层包含不透明材料的层。

    EDGE EMITTING SEMICONDUCTOR LASER
    9.
    发明申请
    EDGE EMITTING SEMICONDUCTOR LASER 审中-公开
    边缘发射半导体激光

    公开(公告)号：US20150325979A1

    公开(公告)日：2015-11-12

    申请号：US14805808

    申请日：2015-07-22

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Christian Lauer ,  Alvaro Gomez-Iglesias

    IPC: H01S5/065 ,  H01S5/042 ,  H01S5/32 ,  H01S5/40 ,  H01S5/10 ,  H01S5/20

    CPC classification number: H01S5/0655 ,  H01S5/02284 ,  H01S5/0425 ,  H01S5/10 ,  H01S5/1082 ,  H01S5/2004 ,  H01S5/2018 ,  H01S5/2036 ,  H01S5/2081 ,  H01S5/2086 ,  H01S5/209 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/323 ,  H01S5/4031 ,  H01S2301/166 ,  H01S2301/176 ,  H01S2301/18

    Abstract: An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, the waveguide region including first and second waveguide layers and an active layer arranged between the first and second waveguide layers, that generates laser radiation; the waveguide region is arranged between a first and second cladding layers disposed downstream of the waveguide region; a phase structure for selection of lateral modes of the laser radiation emitted by the active layer, wherein the phase structure includes at least one cutout extending from a top side of the semiconductor body into the second cladding layer; at least one first intermediate layer composed of a semiconductor material different from that of the second cladding layer embedded into the second cladding layer; and the cutout at least partly extends from the top side into the first intermediate layer; the second cladding layer contains a first partial layer adjoining the waveguide region.

    Abstract translation: 边缘发射半导体激光器包括：半导体本体，其包括波导区域，波导区域包括第一和第二波导层以及布置在第一和第二波导层之间的有源层，其产生激光辐射; 波导区域布置在布置在波导区域下游的第一和第二覆层之间; 用于选择由有源层发射的激光辐射的横向模式的相位结构，其中所述相位结构包括从所述半导体主体的顶侧延伸到所述第二覆层中的至少一个切口; 至少一个第一中间层，由与第二包覆层嵌入的第二包覆层不同的半导体材料构成; 并且所述切口至少部分地从所述顶侧延伸到所述第一中间层中; 第二包层包含邻接波导区域的第一部分层。

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