公开(公告)号：US08022427B2

公开(公告)日：2011-09-20

申请号：US12429854

申请日：2009-04-24

申请人： Yasuto Miyake ,  Ryoji Hiroyama ,  Masayuki Hata ,  Yasumitsu Kuno

发明人： Yasuto Miyake ,  Ryoji Hiroyama ,  Masayuki Hata ,  Yasumitsu Kuno

IPC分类号： H01L33/00

CPC分类号： H01L29/2003 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/812 ,  H01L33/20 ,  H01L33/32 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/73265 ,  H01S5/0201 ,  H01S5/02212 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12 ,  H01L2924/00

摘要： A nitride-based semiconductor device includes a substrate, a first step portion formed on a main surface side of a first side end surface of the substrate, a second step portion formed on the main surface side of a second side end surface substantially parallel to the first side end surface on an opposite side of the first side end surface and a nitride-based semiconductor layer whose first side surface is a (000-1) plane starting from a first side wall of the first step portion and a second side surface starting from a second side wall of the second step portion on the main surface.

摘要翻译： 氮化物系半导体器件包括基板，形成在基板的第一侧端面的主面侧的第一台阶部，形成在基本上平行于基板的第二侧端面的主面侧的第二台阶部 第一侧端面与第一侧端面的相反一侧的第一侧面以及从第一台阶部的第一侧壁开始的第一侧面为（000-1）面的氮化物系半导体层，第二侧面开始 从主表面上的第二台阶部分的第二侧壁。

公开(公告)号：US20110200065A1

公开(公告)日：2011-08-18

申请号：US13040798

申请日：2011-03-04

申请人： Shingo KAMEYAMA ,  Yasuhiko NOMURA ,  Ryoji HIROYAMA ,  Masayuki HATA

发明人： Shingo KAMEYAMA ,  Yasuhiko NOMURA ,  Ryoji HIROYAMA ,  Masayuki HATA

IPC分类号： H01S5/028

CPC分类号： H01S5/32341 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/1082 ,  H01S5/227 ,  H01S5/3202 ,  H01S2301/176

摘要： One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.

摘要翻译： 氮化物基半导体激光器件的一个面和另一个面分别由（0001）的解理面和（000 1）的解理面构成。 因此，一个面和另一个面分别是Ga极平面和N极平面。 位于光波导中的一个面和另一个面的一部分的一部分构成一对腔面。 在一个面上形成包括氧作为构成元素的第一保护膜。 在另一方面形成包括氮作为构成元素的第二保护膜。

公开(公告)号：US07885304B2

公开(公告)日：2011-02-08

申请号：US12415647

申请日：2009-03-31

申请人： Yasuto Miyake ,  Ryoji Hiroyama ,  Masayuki Hata ,  Yasumitsu Kuno

发明人： Yasuto Miyake ,  Ryoji Hiroyama ,  Masayuki Hata ,  Yasumitsu Kuno

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/2077 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/34333 ,  H01S5/4031 ,  H01S2301/185

摘要： A nitride-based semiconductor laser device includes a nitride-based semiconductor layer formed on a main surface of a substrate and having an emission layer, wherein the nitride-based semiconductor layer includes a first side surface formed by a (000-1) plane and a second side surface inclined with respect to the first side surface, and a ridge having an optical waveguide extending perpendicular to a [0001] direction in an in-plane direction of the main surface of the substrate is formed by a region held between the first side surface and the second side surface.

摘要翻译： 氮化物系半导体激光装置包括形成在基板的主表面上并具有发光层的氮化物系半导体层，其中，所述氮化物系半导体层包括由（000-1）面形成的第一侧面和 相对于第一侧面倾斜的第二侧面，以及具有沿基板的主面的面内方向垂直于[0001]方向延伸的光波导的脊形成在保持在第一 侧表面和第二侧表面。

公开(公告)号：US20100265981A1

公开(公告)日：2010-10-21

申请号：US12809770

申请日：2008-12-12

申请人： Ryoji Hiroyama ,  Yasuto Miyake ,  Yasumitsu Kunoh ,  Yasuyuki Bessho ,  Masayuki Hata

发明人： Ryoji Hiroyama ,  Yasuto Miyake ,  Yasumitsu Kunoh ,  Yasuyuki Bessho ,  Masayuki Hata

IPC分类号： H01S5/323 ,  H01L33/30 ,  H01L33/00 ,  H01L21/20 ,  H01L33/10

CPC分类号： H01S5/32341 ,  H01L33/007 ,  H01L33/16 ,  H01L33/20 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/18 ,  H01S5/2231 ,  H01S5/3203 ,  H01S5/4031

摘要： A nitride-based semiconductor light-emitting diode capable of suppressing complication of a manufacturing process while improving light extraction efficiency from a light-emitting layer and further improving flatness of a semiconductor layer is obtained. This nitride-based semiconductor light-emitting diode (30) includes a substrate (11) formed with a recess portion (21) on a main surface and a nitride-based semiconductor layer (12) having a light-emitting layer (14) on the main surface and including a first side surface (12a) having a (000-1) plane formed to start from a first inner side surface (21a) of the recess portion and a second side surface (12b) formed at a region opposite to the first side surface with the light-emitting layer therebetween to start from a second inner side surface (21b) of the recess portion on the main surface.

摘要翻译： 能够抑制发光层的光提取效率的提高，进一步提高半导体层的平坦度的氮化物系半导体发光二极管。 该氮化物系半导体发光二极管（30）具备在主表面上形成有凹部（21）的基板（11）和具有发光层（14）的氮化物系半导体层（12） 所述主表面包括形成为从所述凹部的第一内侧表面（21a）开始的（000-1）面的第一侧表面（12a）和形成在与所述凹部相对的区域形成的第二侧表面（12b） 其间具有发光层的第一侧表面从主表面上的凹部的第二内侧表面（21b）开始。

公开(公告)号：US20090086778A1

公开(公告)日：2009-04-02

申请号：US12236627

申请日：2008-09-24

申请人： Shingo KAMEYAMA ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

发明人： Shingo KAMEYAMA ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

IPC分类号： H01S5/00

CPC分类号： H01S5/32341 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/1082 ,  H01S5/227 ,  H01S5/3202 ,  H01S2301/176

摘要： One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.

摘要翻译： 氮化物基半导体激光器件的一个面和另一个面分别由（0001）的解理面和（000

公开(公告)号：US07512167B2

公开(公告)日：2009-03-31

申请号：US11219875

申请日：2005-09-07

申请人： Hiroaki Izu ,  Tsutomu Yamaguchi ,  Hiroki Ohbo ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Hiroaki Izu ,  Tsutomu Yamaguchi ,  Hiroki Ohbo ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01S3/04 ,  H01S5/00

CPC分类号： H01S5/4025 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48464 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.

摘要翻译： 提供了能够提高激光束的特性并降低光轴调整成本的集成半导体激光装置。 该集成半导体激光器件包括包括第一发射区域并且具有突出部分或凹部的第一半导体激光器元件和包括第二发射区域并且具有凹部或突出部分的第二半导体激光元件。 第一半导体激光元件的突出部或凹部都嵌入第二半导体激光元件的凹部或凸部。

公开(公告)号：US20070274359A1

公开(公告)日：2007-11-29

申请号：US11878331

申请日：2007-07-24

申请人： Kunio Takeuchi ,  Ryoji Hiroyama ,  Daijiro Inoue ,  Shigeyuki Okamoto ,  Noriaki Matsuoka ,  Shingo Kameyama ,  Kiyoshi Oota

发明人： Kunio Takeuchi ,  Ryoji Hiroyama ,  Daijiro Inoue ,  Shigeyuki Okamoto ,  Noriaki Matsuoka ,  Shingo Kameyama ,  Kiyoshi Oota

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01L24/83 ,  H01L2224/83192 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/34326

摘要： A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.

公开(公告)号：US20060078020A1

公开(公告)日：2006-04-13

申请号：US11219875

申请日：2005-09-07

申请人： Hiroaki Izu ,  Tsutomu Yamaguchi ,  Hiroki Ohbo ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Hiroaki Izu ,  Tsutomu Yamaguchi ,  Hiroki Ohbo ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01S5/00

CPC分类号： H01S5/4025 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48464 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.

公开(公告)号：US5559818A

公开(公告)日：1996-09-24

申请号：US312696

申请日：1994-09-27

申请人： Masayuki Shono ,  Ryoji Hiroyama ,  Keiichi Yodoshi

发明人： Masayuki Shono ,  Ryoji Hiroyama ,  Keiichi Yodoshi

IPC分类号： H01S5/34 ,  H01S5/343 ,  H01S3/18 ,  H01L33/00

CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/34326

摘要： The present invention is directed to a semiconductor laser device in which an active layer is constituted by a quantum well layer having a structure in which well layers and barrier layers which are formed on a GaAs substrate are alternately layered, cladding layers are provided so as to interpose the active layer, the value of a strain on each of the well layers is -0.8% to -1.5%, the thickness of a well layer is from 80 .ANG. to 180 .ANG., the value of strain on each of the barrier layers is +0.5% to +1.0%, the thickness of the barrier layer is 20 .ANG. to 60 .ANG., and the respective numbers of layered well layers and barrier layers are 2 to 4.

摘要翻译： 本发明涉及一种半导体激光器件，其中有源层由具有结构的量子阱层构成，其中形成在GaAs衬底上的阱层和阻挡层交替层叠，提供包层，以便 插入有源层，阱层的应变值为-0.8％〜-1.5％，阱层的厚度为80〜180，势垒层的应变值为 + 0.5％〜+ 1.0％时，阻挡层的厚度为20〜60，分层阱层和阻挡层的数量为2〜4。

公开(公告)号：US08750343B2

公开(公告)日：2014-06-10

申请号：US12680412

申请日：2008-09-25

申请人： Ryoji Hiroyama ,  Yasuto Miyake ,  Yasumitsu Kuno ,  Yasuyuki Bessho ,  Masayuki Hata

发明人： Ryoji Hiroyama ,  Yasuto Miyake ,  Yasumitsu Kuno ,  Yasuyuki Bessho ,  Masayuki Hata

IPC分类号： H01S5/22 ,  H01S5/323 ,  H01S5/40

CPC分类号： H01S5/18 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/02208 ,  H01S5/0224 ,  H01S5/02252 ,  H01S5/02292 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0683 ,  H01S5/1085 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/42

摘要： A nitride-based semiconductor light-emitting device capable of suppressing complication of a manufacturing process and reduction of luminous efficiency is obtained. This nitride-based semiconductor light-emitting device (50) includes a nitride-based semiconductor device layer (23) formed on a main surface of a (1-100) plane of a substrate (21), having a light-emitting layer (26) having a main surface of a (1-100) plane, a facet (50a) formed on an end of a region including the light-emitting layer (26) of the nitride-based semiconductor device layer (23), formed by a (000-1) plane extending in a direction substantially perpendicular to the main surface ((1-100) plane) of the light-emitting layer (26), and a reflection surface (50c) formed on a region opposed to the facet (50a) of the (000-1) plane, formed by a growth surface of the nitride-based semiconductor device layer (23), extending in a direction inclined at an angle θ1 (about) 62° with respect to the facet (50a).

摘要翻译： 可以获得能够抑制制造工序的复杂化和发光效率降低的氮化物系半导体发光装置。 该氮化物系半导体发光元件（50）具有形成在基板（（1）的（1-100）面的主面上的氮化物系半导体器件层，具有发光层 26），具有（1-100）面的主表面的小面（50a），形成在包括氮化物类半导体器件层（23）的发光层（26）的区域的一端的端部，由 （（1-100）面）的方向延伸的（000-1）面，以及形成在与该面相对的区域上的反射面（50c） 由所述氮化物基半导体器件层（23）的生长表面形成的所述（000-1）面的（50a），所述生长表面沿着相对于所述刻面以角度θ倾斜的方向（大约）62°延伸; （50a）。