公开(公告)号：US20110272742A1

公开(公告)日：2011-11-10

申请号：US13089981

申请日：2011-04-19

申请人： Shinichi AKIYAMA ,  Kenji Nukui ,  Mutsumi Katou ,  Yoshitaka Watanabe ,  Tetsuya Itou ,  Yoichi Fujisawa ,  Toshiya Sato ,  Tsutomu Hosoda ,  Yuuichi Satou

发明人： Shinichi AKIYAMA ,  Kenji Nukui ,  Mutsumi Katou ,  Yoshitaka Watanabe ,  Tetsuya Itou ,  Yoichi Fujisawa ,  Toshiya Sato ,  Tsutomu Hosoda ,  Yuuichi Satou

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/778 ,  H01L21/324 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/4236 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

摘要： A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer.

摘要翻译： 化合物半导体器件包括：衬底; 形成在所述基板上的化合物半导体层; 形成在所述化合物半导体层上的第一绝缘膜; 形成在所述第一绝缘膜上的第二绝缘膜; 以及栅电极，源电极和漏电极，各自形成在化合物半导体层上，其中栅电极由至少一栅极绝缘体填充有第一导电材料的第一开口形成，第一开口 形成在所述第一绝缘膜中并且被配置为部分地暴露所述化合物半导体层，并且其中所述源电极和所述漏电极由填充有至少第二导电材料的一对第二开口形成，并且所述第二开口形成在 至少所述第二绝缘膜和所述第一绝缘膜，并且被配置为部分地暴露所述化合物半导体层。

公开(公告)号：US08569124B2

公开(公告)日：2013-10-29

申请号：US13089981

申请日：2011-04-19

申请人： Shinichi Akiyama ,  Kenji Nukui ,  Mutsumi Katou ,  Yoshitaka Watanabe ,  Tetsuya Itou ,  Yoichi Fujisawa ,  Toshiya Sato ,  Tsutomu Hosoda ,  Yuuichi Satou

发明人： Shinichi Akiyama ,  Kenji Nukui ,  Mutsumi Katou ,  Yoshitaka Watanabe ,  Tetsuya Itou ,  Yoichi Fujisawa ,  Toshiya Sato ,  Tsutomu Hosoda ,  Yuuichi Satou

IPC分类号： H01L21/336

CPC分类号： H01L29/778 ,  H01L21/324 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/4236 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

摘要： A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer.

摘要翻译： 化合物半导体器件包括：衬底; 形成在所述基板上的化合物半导体层; 形成在所述化合物半导体层上的第一绝缘膜; 形成在所述第一绝缘膜上的第二绝缘膜; 以及栅电极，源电极和漏电极，各自形成在化合物半导体层上，其中栅电极由至少一栅极绝缘体填充有第一导电材料的第一开口形成，第一开口 形成在所述第一绝缘膜中并且被构造成部分地暴露所述化合物半导体层，并且其中所述源电极和所述漏电极由填充有至少第二导电材料的一对第二开口形成，并且所述第二开口形成在 至少所述第二绝缘膜和所述第一绝缘膜，并且被配置为部分地暴露所述化合物半导体层。