公开(公告)号：US4449386A

公开(公告)日：1984-05-22

申请号：US394110

申请日：1982-07-01

申请人： Shinji Akita ,  Masayuki Hatanaka ,  Akira Uemura

发明人： Shinji Akita ,  Masayuki Hatanaka ,  Akira Uemura

IPC分类号： B21B19/02 ,  B21B19/06 ,  B21B31/08

CPC分类号： B21B19/02 ,  B21B19/06 ,  B21B31/08

摘要： In an apparatus for changing the rolling mill rolls and/or disk shoes of a steel pipe rolling mill, the top and bottom rolls vertically movably mounted in the housing are individually placed on a supporting bed positioned below the bottom rolling roll and moved in and out of the mill by way of rails laid in the lower part of the housing, and each of the disk shoes is mounted on a supporting arm which is movable vertically and rotatable thereby making it possible to change the disk shoes even during the operation.

摘要翻译： 在用于更换钢管轧机的轧机辊和/或盘式鞋的装置中，垂直可移动地安装在壳体中的顶部和底部辊单独地放置在位于底部轧辊下方的支撑床上并移入 通过放置在壳体的下部的轨道，并且每个盘形鞋都安装在可垂直和可旋转的支撑臂上，从而使得即使在操作期间也可以改变盘形鞋。

公开(公告)号：US4444035A

公开(公告)日：1984-04-24

申请号：US398813

申请日：1982-07-16

申请人： Shinji Akita ,  Masayuki Hatanaka ,  Akira Uemura

发明人： Shinji Akita ,  Masayuki Hatanaka ,  Akira Uemura

IPC分类号： B21B19/06 ,  B21B31/02 ,  B21B31/08 ,  B21B31/10 ,  B21B31/14

CPC分类号： B21B31/08 ,  B21B19/06 ,  B21B2031/026 ,  B21B31/103 ,  B21B31/14

摘要： In a three-roll Assel mill capable of automatically and rapidly changing the rolls, rails are arranged on an inner housing mounted within each of a fixed housing and a rotary housing to be rotatable along the inner wall thereof, and cradles having rolls mounted therein are placed on the rails, whereby during roll changing the housing proper is shifted and the inner housings are rotated in such a manner that the rails provided on the inner housings are successively aligned with rails laid externally and the rolls are moved in or out of the rolling mill.

摘要翻译： 在能够自动快速地更换辊的三辊Assel轧机中，轨道布置在安装在固定壳体和旋转壳体的每一个内部的内壳体上，以沿其内壁旋转，并且其中安装有辊的托架 放置在轨道上，由此在滚动更换期间，壳体适当移动，并且内壳体以这样的方式旋转，使得设置在内壳体上的轨道被连续地对准与外部放置的轨道，并且辊子滚动或移出滚动 磨。

公开(公告)号：US20060146163A1

公开(公告)日：2006-07-06

申请号：US11322365

申请日：2006-01-03

申请人： Akira Uemura

发明人： Akira Uemura

IPC分类号： H04N5/335

CPC分类号： H04N9/045

摘要： Use of a color linear image sensor including a plurality of pixel lines and CCD lines arranged substantially in parallel and a dummy pattern formed at a chip end side of a pixel line of the plurality of pixel lines that is adjacent to a chip end portion allows the thickness of an on-chip filter to be uniform above pixel lines corresponding to the same color, thereby minimizing nonuniformity in color and sensitivity.

摘要翻译： 使用包括基本上平行排列的多个像素线和CCD线的彩色线性图像传感器以及形成在与芯片端部相邻的多个像素线的像素线的芯片端侧的虚设图形， 片上滤波器的厚度在对应于相同颜色的像素线之上均匀，从而使颜色和灵敏度的不均匀性最小化。

公开(公告)号：US08259207B2

公开(公告)日：2012-09-04

申请号：US12848503

申请日：2010-08-02

申请人： Noboru Takatsuka ,  Akira Uemura

发明人： Noboru Takatsuka ,  Akira Uemura

IPC分类号： H04N3/14 ,  H01L27/00 ,  H01L31/06

CPC分类号： H01L27/14812

摘要： A CCD image sensor includes a photo-diode region segmented by an element separation region; and a CCD register connected with the photo-diode region through a transfer gate. The photo-diode region includes a plurality of tapered portions, and each of the plurality of tapered portions is formed to become wider in a direction of the transfer gate.

摘要翻译： CCD图像传感器包括由元件分离区域分割的光电二极管区域; 以及通过传输门与光电二极管区连接的CCD寄存器。 光电二极管区域包括多个锥形部分，并且多个锥形部分中的每一个形成为在传输门的方向上变宽。

公开(公告)号：US07486132B2

公开(公告)日：2009-02-03

申请号：US11070259

申请日：2005-03-03

申请人： Akira Uemura

发明人： Akira Uemura

IPC分类号： H03F1/14

CPC分类号： H03G1/0094 ,  H03F2200/213 ,  H03F2200/252

摘要： A variable capacitance circuit includes a MOS capacitor, and an application voltage switching section configured to change an application voltage to the MOS capacitor to change a capacitance of the MOS capacitor. The variable capacitance circuit connects the MOS capacitor to an electronic circuit. Here, the electronic circuit may be a voltage amplification circuit, and the variable capacitance circuit may function as an amplification gain switching circuit configured to switch an amplification gain of the voltage amplification circuit, by changing the capacitance to be connected to the voltage amplification circuit.

摘要翻译： 可变电容电路包括MOS电容器和施加电压切换部分，其被配置为改变施加到MOS电容器的电压以改变MOS电容器的电容。 可变电容电路将MOS电容器连接到电子电路。 这里，电子电路可以是电压放大电路，并且可变电容电路可以用作放大增益切换电路，其被配置为通过改变要连接到电压放大电路的电容来切换电压放大电路的放大增益。

公开(公告)号：US07964836B2

公开(公告)日：2011-06-21

申请号：US12411574

申请日：2009-03-26

申请人： Akira Uemura

发明人： Akira Uemura

IPC分类号： H01L27/00

CPC分类号： H04N5/353

摘要： A solid-state imaging device includes a light receiving section (LRS) comprising pixels. The LRS is divided into division regions; a charge transferring section (CTS) transferring charges accumulated in the LRS; an accumulation control electrode provided between the LRS and the CTS transfers charge accumulated in the LRS to the CTS responsive to an accumulation control signal; a monitoring sensor group comprising monitoring sensors respectively provided for the division regions, outputting sensor outputs of the monitoring sensors corresponding to charges amounts of the division regions; a charge detecting circuit outputting a charge detection signal indicating that a predetermined charge quantity is accumulated in at least one of the division regions, based on the sensor outputs from the monitoring sensor group; and a signal control circuit outputting the accumulation control signal in response to the charge detection signal. The charge detecting circuit comprises division region charge detecting sections for the monitoring sensors.

摘要翻译： 固态成像装置包括包含像素的光接收部分（LRS）。 LRS分为区划区域; 转移LRS中累积的费用的计费转移部分（CTS）; 设置在LRS和CTS之间的累积控制电极响应于累加控制信号将累积在LRS中的电荷传送到CTS; 监视传感器组，包括分别为所述分割区域提供的监测传感器，输出与所述分割区域的电荷量对应的所述监测传感器的传感器输出; 电荷检测电路，根据来自监测传感器组的传感器输出，输出指示在至少一个分割区域中累积了预定电荷量的电荷检测信号; 以及信号控制电路，其响应于所述电荷检测信号而输出所述累加控制信号。 电荷检测电路包括用于监测传感器的分割区域电荷检测部分。

公开(公告)号：US20090242737A1

公开(公告)日：2009-10-01

申请号：US12411574

申请日：2009-03-26

申请人： Akira Uemura

发明人： Akira Uemura

IPC分类号： H01L27/00

CPC分类号： H04N5/353

摘要： A solid-state imaging device includes a light receiving section (LRS) comprising pixels. The LRS is divided into division regions; a charge transferring section (CTS) transferring charges accumulated in the LRS; an accumulation control electrode provided between the LRS and the CTS transfers charge accumulated in the LRS to the CTS responsive to an accumulation control signal; a monitoring sensor group comprising monitoring sensors respectively provided for the division regions, outputting sensor outputs of the monitoring sensors corresponding to charges amounts of the division regions; a charge detecting circuit outputting a charge detection signal indicating that a predetermined charge quantity is accumulated in at least one of the division regions, based on the sensor outputs from the monitoring sensor group; and a signal control circuit outputting the accumulation control signal in response to the charge detection signal. The charge detecting circuit comprises division region charge detecting sections for the monitoring sensors.

摘要翻译： 固态成像装置包括包含像素的光接收部分（LRS）。 LRS分为区划区域; 转移LRS中累积的费用的计费转移部分（CTS）; 设置在LRS和CTS之间的累积控制电极响应于累加控制信号将累积在LRS中的电荷传送到CTS; 监视传感器组，包括分别为所述分割区域提供的监测传感器，输出与所述分割区域的电荷量对应的所述监测传感器的传感器输出; 电荷检测电路，根据来自监测传感器组的传感器输出，输出指示在至少一个分割区域中累积了预定电荷量的电荷检测信号; 以及信号控制电路，其响应于所述电荷检测信号而输出所述累加控制信号。 电荷检测电路包括用于监测传感器的分割区域电荷检测部分。

公开(公告)号：US20050195053A1

公开(公告)日：2005-09-08

申请号：US11070259

申请日：2005-03-03

申请人： Akira Uemura

发明人： Akira Uemura

IPC分类号： H03G3/10 ,  H03J3/20

CPC分类号： H03G1/0094 ,  H03F2200/213 ,  H03F2200/252

摘要： A variable capacitance circuit includes a MOS capacitor, and an application voltage switching section configured to change an application voltage to the MOS capacitor to change a capacitance of the MOS capacitor. The variable capacitance circuit connects the MOS capacitor to an electronic circuit. Here, the electronic circuit may be a voltage amplification circuit, and the variable capacitance circuit may function as an amplification gain switching circuit configured to switch an amplification gain of the voltage amplification circuit, by changing the capacitance to be connected to the voltage amplification circuit.

摘要翻译： 可变电容电路包括MOS电容器和施加电压切换部分，其被配置为改变施加到MOS电容器的电压以改变MOS电容器的电容。 可变电容电路将MOS电容器连接到电子电路。 这里，电子电路可以是电压放大电路，并且可变电容电路可以用作放大增益切换电路，其被配置为通过改变要连接到电压放大电路的电容来切换电压放大电路的放大增益。

公开(公告)号：US5234691A

公开(公告)日：1993-08-10

申请号：US603484

申请日：1990-10-26

申请人： Akira Uemura ,  Fumio Samizo ,  Tetsuo Noguchi

发明人： Akira Uemura ,  Fumio Samizo ,  Tetsuo Noguchi

IPC分类号： A61K9/48 ,  A61K9/16 ,  A61K9/20 ,  A61K9/50 ,  A61K9/52 ,  A61K9/58 ,  A61K9/62 ,  A61K9/64 ,  A61K31/425 ,  A61K47/32 ,  A61K47/38

CPC分类号： A61K9/2081 ,  A61K31/425 ,  A61K9/1635 ,  A61K9/1652 ,  A61K9/5047

摘要： A preparation obtained by coating granules containing both a basic medical agent hydrochloride (e.g. allotinolol hydrochloride) and a polyanion the particles of which are present in the form of a discontinuous layer, with a film containing a slightly water-soluble substance, can release said agent at a controlled rate without influenced by the physiological factors of the gastrointestinal tract of a patient when orally administered.

公开(公告)号：US4963509A

公开(公告)日：1990-10-16

申请号：US450223

申请日：1989-12-12

申请人： Yutaka Yoshizawa ,  Akira Uemura

发明人： Yutaka Yoshizawa ,  Akira Uemura

IPC分类号： H01L21/22

CPC分类号： H01L21/221 ,  Y10S148/038 ,  Y10S148/062 ,  Y10S438/904

摘要： Gold is diffused into a silicon substrate by first depositing an ultrathin layer of gold on one of the main faces of the substrate and then by heating the substrate to a temperature range of about 300.degree.-850.degree. C., instead of to about 1000.degree. according to the prior art. Then, following the removal of the remaining gold layer from over the substrate, the latter is reheated to a higher temperature ranging from about 700.degree. C. to about 1000.degree. C. for activating the diffused gold. The gold diffusion at the reduced temperature serves to decrease the surface irregularities of the substrate as a result of gold-silicon alloy zones created at the interface between gold layer and silicon substrate during the thermal diffusion process.

摘要翻译： 通过首先在衬底的一个主面上沉积超薄金层，然后通过将衬底加热到​​约300-850℃的温度范围而不是约1000℃，将金扩散到硅衬底中 根据现有技术。 然后，在从基底上除去剩余的金层之后，将后者再加热至约700℃至约1000℃的较高温度，以激活扩散的金。 在热扩散过程中，由于在金层和硅衬底之间的界面处产生金 - 硅合金区的结果，在降低的温度下的金扩散用于减小衬底的表面不规则性。