TRANSFER APPARATUS AND PLASMA PROCESSING SYSTEM
    1.
    发明申请
    TRANSFER APPARATUS AND PLASMA PROCESSING SYSTEM 审中-公开
    传送装置和等离子体处理系统

    公开(公告)号:US20130062016A1

    公开(公告)日:2013-03-14

    申请号:US13611327

    申请日:2012-09-12

    IPC分类号: B65G49/00 B05C13/00

    摘要: A transfer apparatus transfers an object to be transferred onto a case. The transfer apparatus includes a transfer arm, an arm shaft, a plurality of electromagnets, and a control unit. The transfer arm has a pick unit on a front end thereof and extends and retracts in a horizontal direction. The object to be transferred is held on the pick unit. The arm shaft supports the transfer arm. The plurality of electromagnets apply an force in upward direction to the transfer arm by generating a magnetic field in the case. The control unit controls the plurality of electromagnets in such a manner that when the transfer arm extends and retracts in the horizontal direction, the force in upward direction applied to the transfer arm increases as a length from the arm shaft to the front end of the transfer arm increases.

    摘要翻译: 传送装置将要传送的物体传送到外壳上。 传送装置包括传送臂,臂轴,多个电磁体和控制单元。 传送臂在其前端具有拾取单元,并在水平方向上伸缩。 要传送的物体被保持在拾取单元上。 臂轴支撑传送臂。 多个电磁铁通过在壳体中产生磁场而向上传递臂施加力。 控制单元以这样的方式控制多个电磁体,即当传送臂在水平方向上延伸和缩回时,施加到传送臂的向上方向的力随着从转轴到臂的前端的长度而增加 手臂增加。

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号:US20150380537A1

    公开(公告)日:2015-12-31

    申请号:US14769002

    申请日:2013-02-22

    申请人: Takehiro KATO

    发明人: Takehiro KATO

    IPC分类号: H01L29/739

    摘要: A semiconductor device in which a first region of a first conductivity type, a second region of a second conductivity type, and a third region of the first conductivity type are laminated in this order from a front surface side of a semiconductor substrate, a trench gate electrode extending to the third region through the first region and the second region is formed, a front surface electrode is formed on the front surface, and an insulating region covering a top surface of the trench gate electrode insulates the front surface electrode and the trench gate electrode is known. The insulating region is formed to stay within a trench. The front surface electrode is formed on the front surface with no step and extends uniformly. Generation of stress concentration on the front surface electrode is suppressed, and strength and reliability of the front surface electrode may be improved.

    摘要翻译: 一种半导体器件,其中第一导电类型的第一区域,第二导电类型的第二区域和第一导电类型的第三区域从半导体衬底的正面侧依次层叠,沟槽栅极 通过第一区域和第二区域延伸到第三区域的电极,在前表面上形成前表面电极,并且覆盖沟槽栅电极的顶表面的绝缘区域使前表面电极和沟槽栅极绝缘 电极是已知的。 绝缘区形成为保持在沟槽内。 前表面电极没有台阶形成在前表面上,并且均匀地延伸。 抑制了表面电极上的应力集中的产生,可以提高前表面电极的强度和可靠性。