公开(公告)号：US4841342A

公开(公告)日：1989-06-20

申请号：US192994

申请日：1988-05-12

申请人： Shinji Suzuki ,  Tetsuji Arai ,  Kuniharu Ohno ,  Kazuyeshi Ueki ,  Yoshiki Mimura ,  Kazuya Tanaka ,  Shinji Sugioka ,  Hiroko Suzuki

发明人： Shinji Suzuki ,  Tetsuji Arai ,  Kuniharu Ohno ,  Kazuyeshi Ueki ,  Yoshiki Mimura ,  Kazuya Tanaka ,  Shinji Sugioka ,  Hiroko Suzuki

IPC分类号： G03F7/40 ,  G03C5/00 ,  G03F7/20 ,  G03F7/38 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/2024

摘要： Ultraviolet radiation process applicable in the manufacture of semiconductor devices to enhance the thermal stability of a photoresist film on a semiconductor wafer.A method, in ultraviolet radiation process, and an apparatus enabling the high-speed and effective treatment of a photoresist pattern employing ultraviolet irradiation by preventing the deformation of the photoresist which is caused by the light radiated from a discharge lamp such as high pressure mercury vapor lamp. This method and apparatus employ ultraviolet irradiation, in which ultraviolet rays are applied to the photoresist pattern, using a means to intercept or reduce selectively all or part of the wavelengths in the spectral response region of the photoresist out of radiant energy obtained from the discharge lamp.

摘要翻译： 适用于制造半导体器件的紫外线辐射方法，以增强半导体晶片上的光致抗蚀剂膜的热稳定性。 一种在紫外线照射过程中的方法，以及能够通过防止由诸如高压汞蒸汽等放电灯辐射的光引起的光致抗蚀剂变形而能够高效且有效地处理光刻胶图案的装置 灯。 该方法和装置使用紫外线照射，其中紫外线被施加到光致抗蚀剂图案上，使用这样的手段来拦截或减少从放电灯获得的辐射能的光致抗蚀剂的光谱响应区域中的全部或部分波长 。

公开(公告)号：US4882263A

公开(公告)日：1989-11-21

申请号：US146927

申请日：1988-01-22

申请人： Shinji Suzuki ,  Tetsuji Arai ,  Kazuyoshi Ueki ,  Yoshiki Mimura ,  Hiroko Suzuki

发明人： Shinji Suzuki ,  Tetsuji Arai ,  Kazuyoshi Ueki ,  Yoshiki Mimura ,  Hiroko Suzuki

IPC分类号： G03F7/40 ,  B01J19/12 ,  G03F7/20 ,  H01L21/027

CPC分类号： B01J19/124 ,  G03F7/2024

摘要： Ultraviolet radiation process applies to manufacture to semiconductor devices in order to enhance the thermal stability of the developed positive photoresist film on semiconductor's wafers.A method, in ultraviolet radiation process, and an apparatus enabling the high-speed and effective treatmnent of the positive photoresist employing ultraviolet irradiation by preventing the deformation of the positive photoresist which is caused by the light radiated form the microwave-excited electrodeless discharge lamp. These method and apparatus employ ultraviolet irradiation, in which ultraviolet rays are applied to the developed positive photoresist image placed under lower or pressure than 1 atmospheric pressure, using a means to intercept or reduce selectively all or part of the wavelengths in the spectral response region of the positive photoresist out of radiant lights obtained from the microwave-excited electrodeless discharge lamp.

公开(公告)号：US4888271A

公开(公告)日：1989-12-19

申请号：US146926

申请日：1988-01-22

申请人： Shinji Suzuki ,  Tetsuji Arai ,  Kazuyoshi Ueki ,  Yoshiki Mimura ,  Hiroko Suzuki

发明人： Shinji Suzuki ,  Tetsuji Arai ,  Kazuyoshi Ueki ,  Yoshiki Mimura ,  Hiroko Suzuki

IPC分类号： G03F7/40 ,  G03F7/20 ,  H01L21/027

CPC分类号： G03F7/2024

摘要： Ultraviolet radiation process applies to manufacture semiconductor devices in order to enhance the thermal stability of the developed positive photoresist film on semiconductor wafers.A method, in ultraviolet radiation process, and an apparatus enabling the high-speed and effective treatment of the positive photoresist empolying ultraviolet irradiation by preventing the deformation of the developed positive photoresist image which is caused by the light radiated from a discharge lamp such as high pressure mercury vapor lamp. These method and apparatus employ ultraviolet irradiation, in which ultraviolet rays are applied to the developed positive photoresist image, placed in a chamber filled with gas of lower pressure than 1 atmospheric pressure using a means to intercept or reduce selectively all or part of the wavelengths in the spectral response region of the positive photoresist out of radiant lights obtained from the discharge lamp.

公开(公告)号：US06365899B1

公开(公告)日：2002-04-02

申请号：US09452387

申请日：1999-12-01

申请人： Tetsuji Arai ,  Shinji Suzuki ,  Yoshiki Mimura

发明人： Tetsuji Arai ,  Shinji Suzuki ,  Yoshiki Mimura

IPC分类号： G01J500

CPC分类号： G01N21/255

摘要： A process for determination of blackening of a lamp in which the blackening of a lamp can be determined without visual inspection in real time or during operation is achieved by the spectral radiant energy which is emitted by the lamp bulb being measured and evaluated based on the difference that exists between when blackening occurs as compared to when blackening does not occur. Therefore, blackening of a lamp can be determined by determining the change of the spectral radiant energy emitted by the bulb. Furthermore, in a lamp in which the bulb temperature changes, the spectral radiant energy emitted by the bulb can be measured at two different wavelengths and blackening of the lamp can be determined based on the change of the ratio relative to each other.

摘要翻译： 基于差异来测量和评估由灯泡发射的光谱辐射能量，可以实时地或在操作期间确定灯的黑化可以在没有目视检查的情况下确定灯的黑化的方法 当发生黑化时，与不发生黑化时相比存在。 因此，可以通过确定由灯泡发射的光谱辐射能的变化来确定灯的变黑。 此外，在灯泡温度变化的灯中，灯泡发出的光谱辐射能量可以在两个不同的波长下测量，并且可以基于相对于彼此的比率的变化来确定灯的黑化。

公开(公告)号：US4868095A

公开(公告)日：1989-09-19

申请号：US149308

申请日：1988-01-28

申请人： Shinji Suzuki ,  Kazuyoshi Ueki ,  Hiroko Suzuki ,  Yoshiki Mimura

发明人： Shinji Suzuki ,  Kazuyoshi Ueki ,  Hiroko Suzuki ,  Yoshiki Mimura

IPC分类号： G03F7/40 ,  G03C5/00 ,  G03F7/00 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/2024

摘要： Ultraviolet radiation process applied to manufacture semiconductor devices in order to enhance the thermal stability of the photoresist film on semiconductor wafers.A method, in ultraviolet radiation process, enabling effective treatment of the developed positive photoresist image employing ultraviolet irradiation by preventing the deformation of the developed positive photoresist image which is caused by exposing it to high ultraviolet radiation at the beginning of exposure. This method employs ultraviolet irradiation, in which the developed positive photoresist image placed in gas of a lower atmospheric pressure is exposed to ultraviolet radiation of low intensity at the beginning of exposure, and then exposed to ultraviolet radiation, the intensity of which increases little by little or in steps.

公开(公告)号：US4571486A

公开(公告)日：1986-02-18

申请号：US582259

申请日：1984-02-22

申请人： Tetsuji Arai ,  Yoshiki Mimura

发明人： Tetsuji Arai ,  Yoshiki Mimura

IPC分类号： H01L21/26 ,  B28D5/00 ,  F27D5/00 ,  H01L21/00 ,  H01L21/268 ,  F24H3/00

CPC分类号： H01L21/67115 ,  B28D5/00 ,  F27D5/0062 ,  H01L21/2686

摘要： A method for heating a semiconductor wafer having a first region to be heated and a second region requiring no heating thereof, which method comprises forming a film over at least one of the first and second regions so as to make the reflectivity of the surface of the first region smaller than the reflectivity of the surface of the second region, and then exposing the semiconductor wafer to a flash of light to heat same. The above method permits selectively heating the region which is required to be heated, and, at the same time, to avoid any overheating of the region where no heating is required. The above heating method is particularly effective for annealing a semiconductor wafer which has a large surface area.

摘要翻译： 一种用于加热具有第一待加热区域的半导体晶片和不需要加热的第二区域的方法，所述方法包括在所述第一和第二区域中的至少一个上形成膜，以使所述第一区域的表面的反射率 第一区域小于第二区域的表面的反射率，然后将半导体晶片暴露于闪光以将其加热。 上述方法允许选择性地加热需要加热的区域，并且同时避免不需要加热的区域的任何过热。 上述加热方法对于具有大表面积的半导体晶片的退火特别有效。

公开(公告)号：US4535228A

公开(公告)日：1985-08-13

申请号：US539413

申请日：1983-10-06

申请人： Yoshiki Mimura ,  Tetsuji Arai ,  Hiroshi Shimizu ,  Satoru Fukuda

发明人： Yoshiki Mimura ,  Tetsuji Arai ,  Hiroshi Shimizu ,  Satoru Fukuda

IPC分类号： C23C14/54 ,  C23C16/46 ,  C30B31/12 ,  C30B31/22 ,  H05B3/00 ,  F27D11/00 ,  C23C13/08 ,  H05B1/00

CPC分类号： C30B31/22 ,  C23C14/541 ,  C23C16/46 ,  C30B31/12 ,  H05B3/0047

摘要： Disclosed herein are a heater assembly and a method for heat-treating a semiconductor wafer using the same. The heater assembly is formed of a heating device having a ring-shaped portion and a holder combined with the heating device detachably each other. A wafer material such as a semiconductor wafer is held on the holder of the heater assembly. A heat-treatment is effected by heating the wafer material by means of application of light radiated from a light source, which is formed of one or more lamps, while heating or after having heated the circumferential portion of the wafer by the heating device of the heater assembly. Owing to the subsidiary heating of the circumferential portion, the wafer may be heat-treated at substantially the same temperature in its entirety. Thus, the heat-treatment does not develop such large "warping" impairing subsequent treatment and/or treatment of the wafer or "slip lines". The heater assembly may be used successfully and conveniently in effecting uniform heating. The detachable structural feature of the holder facilitates its cleaning and this is effective in keeping the atmosphere of the irradiation space always clean.

摘要翻译： 本文公开了一种加热器组件和使用其的半导体晶片的热处理方法。 加热器组件由具有环形部分的加热装置和与加热装置组合的保持器彼此可拆卸地形成。 诸如半导体晶片的晶片材料被保持在加热器组件的保持器上。 通过施加从一个或多个灯形成的光源辐射的光来加热晶片材料，同时加热或者在通过加热装置加热晶圆的圆周部分之后加热晶片材料，进行热处理 加热器总成。 由于周向部分的辅助加热，晶片可以在基本上相同的温度下进行热处理。 因此，热处理不会产生妨碍后续处理和/或处理晶片或“滑移线”的这种大的“翘曲”。 加热器组件可以成功地且方便地用于均匀加热。 保持架的可拆卸结构特征有助于其清洁，并且这对于保持照射空间的气氛始终清洁是有效的。

公开(公告)号：US4511788A

公开(公告)日：1985-04-16

申请号：US574453

申请日：1984-01-27

申请人： Tetsuji Arai ,  Yoshiki Mimura

发明人： Tetsuji Arai ,  Yoshiki Mimura

IPC分类号： H05B3/00 ,  H05B3/06 ,  F27B5/14

CPC分类号： H05B3/009

摘要： A light-radiant heating furnace is formed of a multiplane light source constructed by arranging in combination a plurality of plane light source units, each of which is constructed of a plurality of lamps arranged side by side, along a vertically-extending axis in such a manner that the plane light source units surround a heating space. Each of the lamps includes an elongated and sealed tubular envelope and a filament, which has alternately non-luminous portions and luminous portions, and is disposed in such a manner that it extends in a direction perpendicular to the vertically-extending axis. It is preferred to use frame members each of which has two plate portions extending at a predetermined angle relative to each other and defining lamp-supporting holes at different levels. The light-radiant heating furnace can heat an object either uniformly or with a desired temperature distribution to a desired high temperature. Its structure is extremely simple and its assembly is thus easy. It can utilize with high efficiency light radiated from the lamps.

摘要翻译： 光辐射加热炉由多平面光源形成，该多平面光源通过将多个平面光源单元组合在一起，所述多个平面光源单元由沿着垂直延伸的轴并排布置的多个灯构成， 平面光源单元围绕加热空间的方式。 每个灯包括细长密封的管状外壳和灯丝，其具有交替的非发光部分和发光部分，并且以使其沿垂直于垂直延伸轴线的方向延伸的方式设置。 优选使用各自具有相对于彼此以预定角度延伸的两个板部分并且以不同水平限定灯支撑孔的框架构件。 光辐射加热炉可以将物体均匀地或以期望的温度分布加热到所需的高温。 其结构非常简单，组装方便。 它可以利用从灯具辐射的高效率光。

公开(公告)号：US4567352A

公开(公告)日：1986-01-28

申请号：US582260

申请日：1984-02-22

申请人： Yoshiki Mimura ,  Tetsuji Arai ,  Satoru Fukuda

发明人： Yoshiki Mimura ,  Tetsuji Arai ,  Satoru Fukuda

IPC分类号： H01L21/26 ,  C30B25/10 ,  C30B33/00 ,  A21B1/00 ,  A21B1/22

CPC分类号： C30B25/105 ,  C30B33/00

摘要： A flashlight-radiant apparatus is constructed of a housing defining an object-handling space and an irradiation space located adjacent to the object-handling space, a plurality of flash discharge lamps provided side by side in an upper part of the irradiation space, a gas-discharging member provided in the upper part of the irradiation space for controlling the atmosphere of the housing, and an object-supporting table movable reciprocally between the object-handling space and the irradiation space in the housing and equipped with built-in subsidiary heating. An object, for example, a silicon wafer is preheated on the object-supporting table while the object-supporting table is located in the object-handling space. The flashlight-radiant apparatus has a simple structure, enjoys a high level of handling safety, assures long service life for its flash discharge lamps, and is suitable particularly for annealing semiconductor wafers.

摘要翻译： 手电筒辐射装置由限定物体处理空间的壳体和位于物体处理空间附近的照射空间构成，多个在照射空间的上部并排设置的闪光放电灯，气体 - 设置在照射空间的上部的用于控制壳体的气氛的上部的充电构件，以及在物体搬运空间与壳体中的照射空间之间往复运动并配备有内置的辅助加热的物体支承台。 例如，在对象支撑台位于物体处理空间中的情况下，在对象支撑台上预热一个目标物体。 手电筒辐射装置结构简单，操作安全性高，保证了其闪光灯的使用寿命长，特别适用于退火半导体晶片。

公开(公告)号：US4525380A

公开(公告)日：1985-06-25

申请号：US582273

申请日：1984-02-22

申请人： Tetsuji Arai ,  Yoshiki Mimura

发明人： Tetsuji Arai ,  Yoshiki Mimura

IPC分类号： H01L21/26 ,  H01L21/268 ,  B05D3/06

CPC分类号： H01L21/2686

摘要： A method for heating a semiconductor wafer which may have a first region to be heated and a second region requiring no heating thereof, which method comprises forming a film on a surface of the semiconductor wafer so as to make the reflectivity of the whole surface of the wafer uniform, and then exposing the semiconductor wafer to a flash of light to heat same. The above method permits to heat the whole surface of the wafer at a uniform temperature thereby heating a region of the wafer which is required to be heated, and, at the same time, avoiding any overheating of another region of the wafer where no heating is required. The above heating method is effective for annealing a semiconductor wafer which has large surface area.

摘要翻译： 一种用于加热可能具有第一待加热区域的半导体晶片和不需要加热的第二区域的方法，该方法包括在半导体晶片的表面上形成膜，以使得半导体晶片的整个表面的反射率 晶片均匀，然后将半导体晶片暴露于闪光以加热。 上述方法允许在均匀的温度下加热晶片的整个表面，从而加热需要加热的晶片的区域，并且同时避免晶片的其他区域的任何过热，其中不加热是 需要。 上述加热方法对于具有大表面积的半导体晶片的退火是有效的。