公开(公告)号：US08405178B2

公开(公告)日：2013-03-26

申请号：US12842220

申请日：2010-07-23

申请人： Shinya Sugino ,  Satoshi Sakai ,  Yusuke Nonaka ,  Tomohiro Saito ,  Tomoyasu Furukawa ,  Hiroyuki Hayashi

发明人： Shinya Sugino ,  Satoshi Sakai ,  Yusuke Nonaka ,  Tomohiro Saito ,  Tomoyasu Furukawa ,  Hiroyuki Hayashi

IPC分类号： H01L23/48

CPC分类号： H01L27/14605 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a solid-state image sensor device, the efficiency of light collection to a light-receiving region of a photodiode PD through a microlens is enhanced by arranging a wiring line configuration. Each of the first metal layer and the second metal layer is arranged to have a ring-like portion formed along a profile of the light-receiving region of the photodiode PD in a fashion that an upper position over the photodiode PD is surrounded by the first and second metal layers and a third metal layer.

摘要翻译： 在固态图像传感器装置中，通过布置布线配置来增强通过微透镜对光电二极管PD的光接收区域的光采集效率。 第一金属层和第二金属层中的每一个被布置成具有沿着光电二极管PD的光接收区域的轮廓形成的环状部分，其方式是光电二极管PD上的上部位置被第一 和第二金属层和第三金属层。

公开(公告)号：US09093349B2

公开(公告)日：2015-07-28

申请号：US13547452

申请日：2012-07-12

申请人： Tomoyasu Furukawa ,  Satoshi Sakai ,  Yusuke Nonaka ,  Shinya Sugino

发明人： Tomoyasu Furukawa ,  Satoshi Sakai ,  Yusuke Nonaka ,  Shinya Sugino

IPC分类号： H01L29/49 ,  H01L27/146

CPC分类号： H01L27/14689 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14645

摘要： In a region of a weak internal electric field, photocharges generated in a region deeper than the photodiode are diffused laterally to lower the sensitivity by photoelectrons flowing into adjacent pixels, etc (crosstalk). An anti-crosstalk layer is disposed in the photodiode forming portion, and between a pixel region and a peripheral circuit region. Crosstalk between a pixel and a pixel or between a pixel region and a peripheral circuit region is decreased to improve the photosensitivity.

摘要翻译： 在弱内部电场的区域中，在比光电二极管更深的区域产生的光电荷被横向扩散，从而通过流入相邻像素的光电子等（串扰）降低灵敏度。 在光电二极管形成部分中，在像素区域和外围电路区域之间设置抗串扰层。 像素与像素之间或像素区域与外围电路区域之间的串扰减小，以提高光敏性。

公开(公告)号：US20130049156A1

公开(公告)日：2013-02-28

申请号：US13547452

申请日：2012-07-12

申请人： Tomoyasu FURUKAWA ,  Satoshi Sakai ,  Yusuke Nonaka ,  Shinya Sugino

发明人： Tomoyasu FURUKAWA ,  Satoshi Sakai ,  Yusuke Nonaka ,  Shinya Sugino

IPC分类号： H01L31/12

CPC分类号： H01L27/14689 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14645

摘要： In a region of a weak internal electric field, photocharges generated in a region deeper than the photodiode are diffused laterally to lower the sensitivity by photoelectrons flowing into adjacent pixels, etc (crosstalk). An anti-crosstalk layer is disposed in the photodiode forming portion, and between a pixel region and a peripheral circuit region. Crosstalk between a pixel and a pixel or between a pixel region and a peripheral circuit region is decreased to improve the photosensitivity.

摘要翻译： 在弱内部电场的区域中，在比光电二极管更深的区域产生的光电荷被横向扩散，从而通过流入相邻像素的光电子等（串扰）降低灵敏度。 在光电二极管形成部分中，在像素区域和外围电路区域之间设置抗串扰层。 像素与像素之间或像素区域与外围电路区域之间的串扰减小，以提高光敏性。