公开(公告)号：US06534380B1

公开(公告)日：2003-03-18

申请号：US09116956

申请日：1998-07-17

申请人： Shoichi Yamauchi ,  Hisayoshi Ohshima ,  Masaki Matsui ,  Kunihiro Onoda ,  Tadao Ooka ,  Akitoshi Yamanaka ,  Toshifumi Izumi

发明人： Shoichi Yamauchi ,  Hisayoshi Ohshima ,  Masaki Matsui ,  Kunihiro Onoda ,  Tadao Ooka ,  Akitoshi Yamanaka ,  Toshifumi Izumi

IPC分类号： H01L2130

CPC分类号： H01L21/76254 ,  Y10S438/96

摘要： Before a semiconductor substrate and a base substrate is directly bonded to one another, in a protective film removing step, a contamination protective film formed on the semiconductor substrate to protect it from contamination during an ion implanting step is removed. Consequently, even when flatness of the contamination protective film is degraded during the ion implanting step or even when contaminants remain in a segregated state in the vicinity of the surface of the contamination protective film, the state of the bonding between the semiconductor substrate and the base substrate after the bonding step can be made uniform over the entire area of the bonding. As a result, a high-quality semiconductor substrate can be manufactured at low cost.

摘要翻译： 在半导体基板和基底基板彼此直接接合之前，在保护膜去除步骤中，去除了在离子注入步骤期间形成在半导体衬底上以防止其污染的污染保护膜。 因此，即使当在离子注入步骤期间污染保护膜的平坦度劣化时，或者甚至当污染保护膜表面附近的污染物保持分离状态时，半导体衬底和基底之间的接合状态 接合步骤之后的基板可以在结合的整个区域上均匀。 结果，可以以低成本制造高质量的半导体衬底。