Semiconductor substrate and method of manufacturing the same
    1.
    发明授权
    Semiconductor substrate and method of manufacturing the same 失效
    半导体衬底及其制造方法

    公开(公告)号:US06534380B1

    公开(公告)日:2003-03-18

    申请号:US09116956

    申请日:1998-07-17

    IPC分类号: H01L2130

    CPC分类号: H01L21/76254 Y10S438/96

    摘要: Before a semiconductor substrate and a base substrate is directly bonded to one another, in a protective film removing step, a contamination protective film formed on the semiconductor substrate to protect it from contamination during an ion implanting step is removed. Consequently, even when flatness of the contamination protective film is degraded during the ion implanting step or even when contaminants remain in a segregated state in the vicinity of the surface of the contamination protective film, the state of the bonding between the semiconductor substrate and the base substrate after the bonding step can be made uniform over the entire area of the bonding. As a result, a high-quality semiconductor substrate can be manufactured at low cost.

    摘要翻译: 在半导体基板和基底基板彼此直接接合之前,在保护膜去除步骤中,去除了在离子注入步骤期间形成在半导体衬底上以防止其污染的污染保护膜。 因此,即使当在离子注入步骤期间污染保护膜的平坦度劣化时,或者甚至当污染保护膜表面附近的污染物保持分离状态时,半导体衬底和基底之间的接合状态 接合步骤之后的基板可以在结合的整个区域上均匀。 结果,可以以低成本制造高质量的半导体衬底。

    Semiconductor substrate manufacturing method
    3.
    发明授权
    Semiconductor substrate manufacturing method 失效
    半导体衬底制造方法

    公开(公告)号:US06251754B1

    公开(公告)日:2001-06-26

    申请号:US09074384

    申请日:1998-05-08

    IPC分类号: H01L2120

    CPC分类号: H01L21/76254

    摘要: The invention provides a number of semiconductor substrate manufacturing methods with which, in manufacturing a semiconductor substrate having a semiconductor layer in an insulated state on a supporting substrate, it is possible to obtain a thick semiconductor layer with a simple process and cheaply while reducing impurity contamination of the semiconductor layer to a minimum. One of these methods includes a defective layer forming step of carrying out ion implantation to a predetermined depth from the surface of a base substrate to partition off a monocrystalline thin film layer at the surface of the base substrate by a defective layer formed by implanted ions, a semiconductor film forming step of forming a monocrystalline semiconductor film of a predetermined thickness on the monocrystalline thin film layer, a laminating step of laminating the base substrate by the surface of the monocrystalline semiconductor film to the supporting substrate, and a detaching step of detaching the base substrate laminated to the supporting substrate at the defective layer.

    摘要翻译: 本发明提供了许多半导体衬底制造方法,在制造具有在支撑衬底上具有绝缘状态的半导体层的半导体衬底的情况下,可以以简单的工艺获得厚半导体层并且在降低杂质污染的同时廉价 的半导体层。 这些方法之一包括从基底表面进行离子注入到预定深度的缺陷层形成步骤,以通过由注入离子形成的缺陷层在基底基板的表面分隔单晶薄膜层, 在单晶薄膜层上形成预定厚度的单晶半导体膜的半导体膜形成步骤,通过单晶半导体膜的表面将基底基板层压到支撑基板上的层压步骤,以及将基板 基底基板层叠到不良层的支撑基板。

    Method for producing a semiconductor substrate
    4.
    发明授权
    Method for producing a semiconductor substrate 有权
    半导体基板的制造方法

    公开(公告)号:US6060344A

    公开(公告)日:2000-05-09

    申请号:US136294

    申请日:1998-08-19

    摘要: In a method for producing a semiconductor substrate completed through a bonding process for joining a semiconductor wafer to a support substrate by performing heat treatment thereto in a state in which the semiconductor wafer is closely joined to the support substrate, the method according to the present invention includes the following steps, i.e., a depositing process for depositing a poly-crystal semiconductor which covers all areas of a surface to be bonded on the surface of the semiconductor wafer; a heat treatment process for performing the heat treatment to the semiconductor wafer provided after the depositing process, during a predetermined time under a temperature equal to or higher than the heat treatment temperature at the bonding process; and a polishing process for flattening the surface of the poly-crystal semiconductor provided after the heat treatment process. After the above processes were performed in order, the bonding process is performed after the polishing process.

    摘要翻译: 在半导体基板的制造方法中,通过在将半导体晶片紧密接合到支撑基板的状态下对半导体晶片与支撑基板进行热处理的接合工序而完成,本发明的方法 包括以下步骤,即,用于沉积覆盖半导体晶片表面上要接合的表面的所有区域的多晶半导体的沉积工艺; 在接合工序的等于或高于所述热处理温度的温度下的预定时间内对所述沉积工艺之后提供的所述半导体晶片进行热处理的热处理工艺; 以及用于使在热处理工艺之后提供的多晶半导体的表面变平的抛光工艺。 在进行上述处理之后,在抛光处理之后进行接合处理。

    Fixing unit and image forming apparatus
    9.
    发明授权
    Fixing unit and image forming apparatus 失效
    定影单元和成像设备

    公开(公告)号:US08090305B2

    公开(公告)日:2012-01-03

    申请号:US12770145

    申请日:2010-04-29

    IPC分类号: G03G15/20

    CPC分类号: G03G15/2096 G03G15/2064

    摘要: Disclosed is a fixing device including a liquid supply unit that supplies a liquid fixer containing a softening agent that dissolves or swells at least part of resin to soften the resin; an air supply unit that supplies air for foaming the liquid fixer; and a foam generation unit that mixes the liquid fixer from the liquid supply unit with the air from the air supply unit to generate foams. The foam generation unit has an air channel where the air from the air supply unit flows, a liquid-fixer channel provided such that the liquid fixer from the liquid supply unit flows from a direction opposite to a flowing direction of the air channel, and an air-and-liquid mixing part that mixes the air from the air channel with the liquid fixer from the liquid fixer channel so as to be opposite to each other, thereby generating a foam-like fixer.

    摘要翻译: 公开了一种定影装置,其包括:液体供应单元,其供应含有溶解或溶胀至少部分树脂以软化树脂的软化剂的液体定影剂; 空气供应单元,其供应用于使液体定影剂发泡的空气; 以及泡沫产生单元,其将来自液体供应单元的液体定影剂与来自空气供应单元的空气混合以产生泡沫。 泡沫产生单元具有空气通道,空气供给单元的空气流动,液体定影通道设置成使得来自液体供应单元的液体定影剂从与空气通道的流动方向相反的方向流动, 空气和液体混合部分,其将来自空气通道的空气与液体定影剂从液体定影剂通道混合,以便彼此相对,从而产生泡沫状定影剂。