Method and Apparatus for Pattern Position and Overlay Measurement
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    发明申请
    Method and Apparatus for Pattern Position and Overlay Measurement 有权
    图形位置和叠加测量的方法和装置

    公开(公告)号:US20110155904A1

    公开(公告)日:2011-06-30

    申请号:US12648766

    申请日:2009-12-29

    IPC分类号: G01N23/00 G01B15/00

    摘要: Systems and methods using imaged device patterns to measure overlay between different layers in a semiconductor manufacturing process, such as a double-patterning process. Images of pattern features are acquired by scanning electron microscopy. The position of a patterning layer is determined using positions of pattern features for the patterning layer in the images. A relative position of each patterning layer with respect to other pattern features or patterning layers is determined in vector form based on the determined pattern positions. Overlay error is determined based on a comparison of the relative position with reference values from design or simulation. Overlay can be measured with high precision and accuracy by utilizing pattern symmetry.

    摘要翻译: 使用成像装置图案的系统和方法来测量半导体制造工艺中的不同层之间的覆盖层,例如双重图案化工艺。 通过扫描电子显微镜获得图案特征的图像。 使用图像中的图案化层的图案特征的位置来确定图案化层的位置。 基于所确定的图案位置,以向量形式确定每个图案形成层相对于其它图案特征或图案化层的相对位置。 叠加误差是根据相对位置与设计或模拟参考值的比较来确定的。 可以通过利用图案对称性以高精度和精度测量覆盖层。