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公开(公告)号:US20110155904A1
公开(公告)日:2011-06-30
申请号:US12648766
申请日:2009-12-29
申请人: Shoji HOTTA , Norio Hasegawa
发明人: Shoji HOTTA , Norio Hasegawa
CPC分类号: G03F7/70466 , G03F7/70633 , G06T7/60 , G06T2207/10061 , G06T2207/30148 , H01J2237/2817 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要: Systems and methods using imaged device patterns to measure overlay between different layers in a semiconductor manufacturing process, such as a double-patterning process. Images of pattern features are acquired by scanning electron microscopy. The position of a patterning layer is determined using positions of pattern features for the patterning layer in the images. A relative position of each patterning layer with respect to other pattern features or patterning layers is determined in vector form based on the determined pattern positions. Overlay error is determined based on a comparison of the relative position with reference values from design or simulation. Overlay can be measured with high precision and accuracy by utilizing pattern symmetry.
摘要翻译: 使用成像装置图案的系统和方法来测量半导体制造工艺中的不同层之间的覆盖层,例如双重图案化工艺。 通过扫描电子显微镜获得图案特征的图像。 使用图像中的图案化层的图案特征的位置来确定图案化层的位置。 基于所确定的图案位置,以向量形式确定每个图案形成层相对于其它图案特征或图案化层的相对位置。 叠加误差是根据相对位置与设计或模拟参考值的比较来确定的。 可以通过利用图案对称性以高精度和精度测量覆盖层。
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公开(公告)号:US20110095183A1
公开(公告)日:2011-04-28
申请号:US12982202
申请日:2010-12-30
申请人: Yasunari SOHDA , Shoji HOTTA , Shinji OKAZAKI , Muneyuki FUKUDA
发明人: Yasunari SOHDA , Shoji HOTTA , Shinji OKAZAKI , Muneyuki FUKUDA
IPC分类号: G01N23/00
CPC分类号: G03F7/7065 , G03F7/70541 , G03F7/70625 , G06T7/0006 , G06T2207/10056 , G06T2207/30148 , H01J2237/221 , H01J2237/24578 , H01J2237/2817 , H01L22/12
摘要: The present invention provides an electron beam measurement technique for measuring the shapes or sizes of portions of patterns on a sample, or detecting a defect or the like. An electron beam measurement apparatus has a unit for irradiating the patterns delineated on a substrate by a multi-exposure method, and classifying the patterns in an acquired image into multiple groups according to an exposure history record. The exposure history record is obtained based on brightness of the patterns and a difference between white bands of the patterns.
摘要翻译: 本发明提供一种电子束测量技术,用于测量样品上图案的形状或尺寸,或检测缺陷等。 电子束测量装置具有通过多曝光方法照射在基板上描绘的图案的单元,并且根据曝光历史记录将所获取的图像中的图案分类为多组。 基于图案的亮度和图案的白色波段之间的差异获得曝光历史记录。
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