摘要:
A memory system includes an active storage circuit and at least one base storage circuit. The at least one base storage circuit is coupled to the active storage circuit though at least one pass gate, at least one driver and a bit line. The at least one pass gate and the at least one driver have a device size substantially similar to a device size of each one of the devices in the active storage circuit and the at least one base storage circuit. A method of swapping data between two storage circuits is also described.
摘要:
A multi-threaded memory system including a plurality of entries, each one of the plurality of entries including a plurality of threads, each one of the plurality of threads including an active cell and a shared read cell. The shared read cell has an output coupled to a read bit line and a corresponding plurality of inputs coupled to an output of the corresponding active cells in each one of the plurality of threads. A multi-threaded memory system is also described.