公开(公告)号：US5694207A

公开(公告)日：1997-12-02

申请号：US762076

申请日：1996-12-09

申请人： Shu Chi Hung ,  Hun-Jan Tao

发明人： Shu Chi Hung ,  Hun-Jan Tao

IPC分类号： G01N21/73 ,  H01L21/3065 ,  G01N21/62

CPC分类号： H01L21/3065 ,  G01N21/73

摘要： The etch rate in a plasma etching system has been monitored in-situ by using optical emission spectroscopy to measure the intensities of two or more peaks in the radiation spectrum and then using the ratio of two such peaks as a direct measure of etch rate. Examples of such peaks occur at 338.5 and 443.7 nm and at 440.6 and 437.6 nm for the fluoride/SOG system. Alternately, the intensities of at least four such peaks may be measured and the product of two ratios may be used. Examples of peaks used in this manner occurred at 440.5, 497.2 and 502.3 nm, also for the fluoride/SOG system. The method is believed to be general and not limited to fluoride/SOG.

摘要翻译： 已经通过使用光发射光谱法原位监测等离子体蚀刻系统中的蚀刻速率，以测量辐射光谱中两个或更多个峰的强度，然后使用两个这样的峰的比例作为蚀刻速率的直接测量。 对于氟化物/ SOG体系，这些峰的实例在338.5和443.7nm以及440.6和437.6nm处发生。 或者，可以测量至少四个这样的峰的强度，并且可以使用两个比率的乘积。 以这种方式使用的峰的实例发生在440.5,497.2和502.3nm，也用于氟化物/ SOG体系。 该方法被认为是通用的，不限于氟化物/ SOG。