摘要:
Provided are a method which permits complete training data and data with added errors, and enables the early and accurate discovery of errors in facilities such as a plant, and a system thereof. To achieve the objectives, (1) the behavior of temporal data is observed over time, and the trace is divided into clusters; (2) the divided cluster groups are modeled in sub spaces, and the discrepancy values are calculated as errors candidates; (3) the training data are used (compare, reference, etc.) for reference to determine the state transitions caused by the changes over time, the environmental changes, the maintenance (parts replacement), and the operation states; and (4) the modeling is a sub space method such as regression analysis or projection distance method of every N data removing N data items, (N=0, 1, 2, . . . ) (for example, when N=1, one error data item is considered to have been added, this data is removed, then the modeling is performed), or a local sub space method. Linear fitting in regression analysis is equivalent to the lowest order regression analysis.
摘要:
When size of a defect on an increasingly miniaturized pattern is obtained by defect inspection apparatus in the related art, a value is inconveniently given, which is different from a measured value of the same defect by SEM. Thus, a dimension value of a defect detected by defect inspection apparatus needs to be accurately calculated to be approximated to a value measured by SEM. To this end, size of the defect detected by the defect inspection apparatus is corrected depending on feature quantity or type of the defect, thereby defect size can be accurately calculated.
摘要:
A defect inspection apparatus for inspecting defects on an inspecting object includes an illuminator which irradiates a beam of light on the inspecting object, a photo-detector which detects rays of light from the inspecting object due to the irradiation of the light beam by the illuminator, a defect detector which detects a defect by processing a signal obtained through detection by the photo-detector, a characteristic quantity calculator which calculates a characteristic quantity related to a size of the defect, and a defect size calculator which uses a relation between size and characteristic quantity which is calculated by an optical simulation and calculates a size of the detected defect.
摘要:
To inspect a substrate such as a semiconductor substrate for surface roughness at high precision.The surface roughness of the substrate is measured in each frequency band of the surface roughness by applying a light to the substrate surface and detecting a scattered light or reflected light at a plurality of azimuth or elevation angles.
摘要:
When size of a defect on an increasingly miniaturized pattern is obtained by defect inspection apparatus in the related art, a value is inconveniently given, which is different from a measured value of the same defect by SEM. Thus, a dimension value of a defect detected by defect inspection apparatus needs to be accurately calculated to be approximated to a value measured by SEM. To this end, size of the defect detected by the defect inspection apparatus is corrected depending on feature quantity or type of the defect, thereby defect size can be accurately calculated.
摘要:
In a pattern inspection apparatus, influences of pattern brightness variations that is caused in association with, for example, a film thickness difference or a pattern width variation can be reduced, high sensitive pattern inspection can be implemented, and a variety of defects can be detected. Thereby, the pattern inspection apparatus adaptable to a broad range of processing steps is realized. In order to realize this, the pattern inspection apparatus of the present invention performs comparison between images of regions corresponding to patterns formed to be same patterns, thereby determining mismatch portions across the images to be defects. The apparatus includes multiple sensors capable of synchronously acquiring images of shiftable multiple detection systems different from one another, and an image comparator section corresponding thereto. In addition, the apparatus includes means of detecting a statistical offset value from the feature amount to be a defect, thereby enabling the defect to be properly detected even when a brightness difference is occurring in association with film a thickness difference in a wafer.
摘要:
An inspecting method and apparatus for inspecting a substrate surface includes illuminating a light to the substrate surface having a film, detection of a scattered light or reflected light from a plurality of positions of the substrate surface to obtain a plurality of electrical signals, comparison of the plurality of electrical signals and a database which indicates a relationship between the electrical signals and surface roughness, and calculation of a surface roughness value based on the result of comparison.
摘要:
A visual inspection method and apparatus detecting a defect with the use of a detected signal obtained by illuminating one of a light and an electron beam onto a substrate to be inspected. The visual inspection method and apparatus includes calculation of an image feature based on an image of the detected defect, calculation of a coordinate feature based on position information of the detected defect, and outputting of real defect information by performing false alarm judgment by processing with respect to one of the image feature and the coordinate feature.
摘要:
To allow early sensing of anomalies in a manufacturing plant or other infrastructure (plant), provided is a method that acquires data of runtime status of said plant from a plurality of sensors of said plant, makes a model from training data that corresponds to the regular runtime status of said plant, employs the training data thus modeled in computing a anomaly measure of the data acquired from the sensors, and detects anomalies. In computing the anomaly measure, the anomaly is detected by recursively carrying out: a derivation of a residual error from the training data thus modeled acquired from the plurality of sensors, a removal of a signal having a residual error that is greater than a predetermined value, and a computation of the anomaly measure for the data that is acquired from the plurality of sensors whereupon the signal having the large residual error is removed.
摘要:
In a pattern inspection apparatus, influences of pattern brightness variations that is caused in association with, for example, a film thickness difference or a pattern width variation can be reduced, high sensitive pattern inspection can be implemented, and a variety of defects can be detected. Thereby, the pattern inspection apparatus adaptable to a broad range of processing steps is realized. In order to realize this, the pattern inspection apparatus of the present invention performs comparison between images of regions corresponding to patterns formed to be same patterns, thereby determining mismatch portions across the images to be defects. The apparatus includes multiple sensors capable of synchronously acquiring images of shiftable multiple detection systems different from one another, and an image comparator section corresponding thereto. In addition, the apparatus includes means of detecting a statistical offset value from the feature amount to be a defect, thereby enabling the defect to be properly detected even when a brightness difference is occurring in association with film a thickness difference in a wafer.