PLASMA CVD APPARATUS
    1.
    发明申请
    PLASMA CVD APPARATUS 有权
    等离子体CVD装置

    公开(公告)号:US20120045593A1

    公开(公告)日:2012-02-23

    申请号:US13287597

    申请日:2011-11-02

    IPC分类号: H05H1/24

    摘要: In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.

    摘要翻译: 在等离子体CVD装置中,防止了不必要的放电,例如电弧放电,由于附着在反应室上的膜的剥离引起的颗粒的量减少,并且在该设备的工作时间内有助于生产的时间的百分比增加 同时保持设备的扩大和易于加工的性能。 等离子体CVD装置被构造成使得在具有电源113,真空排气装置118和反应气体引入管114的导电反应室104中,在由电极111围绕的空间中产生等离子体115,衬底保持器 112和绝缘体120。

    PLASMA CVD APPARATUS
    2.
    发明申请
    PLASMA CVD APPARATUS 有权
    等离子体CVD装置

    公开(公告)号:US20090197012A1

    公开(公告)日:2009-08-06

    申请号:US12417158

    申请日:2009-04-02

    IPC分类号: C23C14/02

    摘要: In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.

    摘要翻译: 在等离子体CVD装置中,防止了不必要的放电,例如电弧放电,由于附着在反应室上的膜的剥离引起的颗粒的量减少,并且在该设备的工作时间内有助于生产的时间的百分比增加 同时保持设备的扩大和易于加工的性能。 等离子体CVD装置被构造成使得在具有电源113,真空排气装置118和反应气体引入管114的导电反应室104中,在由电极111围绕的空间中产生等离子体115,衬底保持器 112和绝缘体120。

    PIEZOELECTRIC DEVICES HAVING IMPROVED IMPACT RESISTANCE
    5.
    发明申请
    PIEZOELECTRIC DEVICES HAVING IMPROVED IMPACT RESISTANCE 有权
    具有改善的抗冲击性的压电元件

    公开(公告)号:US20100079040A1

    公开(公告)日:2010-04-01

    申请号:US12564846

    申请日:2009-09-22

    IPC分类号: H01L41/04

    摘要: An exemplary piezoelectric vibrating device has a lid plate, a chip plate including a tuning-fork type vibrating piece surrounded by an outer frame, and a package base arranged where the chip plate is sandwiched between the lid plate and package base, and the three layers are bonded together. The tuning-fork type piezoelectric vibrating piece is connected to the outer frame by supporting arms. A base-movement buffer having a predetermined height in the X-direction extends from the inner edge surface of the outer frame toward a side edge of the base. The base-movement buffer has a height in the X-direction that is proportional to the length from the base-movement buffer to a point at which the tuning-fork type piezoelectric vibrating piece is coupled to the outer frame.

    摘要翻译: 示例性压电振动装置具有盖板,包括由外框包围的音叉型振动片的芯片板和布置在芯片板夹在盖板和封装基座之间的封装基座,并且三层 结合在一起 音叉型压电振动片通过支撑臂与外框连接。 在X方向上具有预定高度的基座移动缓冲器从外框的内边缘朝向底座的侧边缘延伸。 基座移动缓冲器具有与从基座移动缓冲器到音叉型压电振动片联接到外框架的点成比例的X方向的高度。