公开(公告)号：US08237179B2

公开(公告)日：2012-08-07

申请号：US13241351

申请日：2011-09-23

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

IPC分类号： H01L33/00

CPC分类号： H01L27/3265 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78633

摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

摘要翻译： 提供一种可以防止由于泄漏或其它原因引起的栅极电压变化并且同时可以防止开口率降低的发光器件。 电容器存储器由连接布线，绝缘膜和电容布线形成。 连接布线形成在栅电极和像素的TFT的有源层上，并与有源层连接。 绝缘膜形成在连接布线上。 电容布线形成在绝缘膜上。 这种结构使得电容器存储与TFT重叠，从而在保持开口率降低的同时增加电容器存储的容量。 因此，可以避免由于泄漏或其他原因导致的栅极电压的变化，以防止OLED的亮度变化和模拟驱动中屏幕的闪烁。

公开(公告)号：US07242024B2

公开(公告)日：2007-07-10

申请号：US10986931

申请日：2004-11-15

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

IPC分类号： H01L27/15

CPC分类号： H01L27/3265 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78633

摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

摘要翻译： 提供一种可以防止由于泄漏或其它原因引起的栅极电压变化并且同时可以防止开口率降低的发光器件。 电容器存储器由连接布线，绝缘膜和电容布线形成。 连接布线形成在栅电极和像素的TFT的有源层上，并与有源层连接。 绝缘膜形成在连接布线上。 电容布线形成在绝缘膜上。 这种结构使得电容器存储与TFT重叠，从而在保持开口率降低的同时增加电容器存储的容量。 因此，可以避免由于泄漏或其他原因导致的栅极电压的变化，以防止OLED的亮度变化和模拟驱动中屏幕的闪烁。

公开(公告)号：US08546825B2

公开(公告)日：2013-10-01

申请号：US13555292

申请日：2012-07-23

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

IPC分类号： H01L33/00

CPC分类号： H01L27/3265 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78633

摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

公开(公告)号：US20110006306A1

公开(公告)日：2011-01-13

申请号：US12879032

申请日：2010-09-10

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

IPC分类号： H01L33/00

CPC分类号： H01L27/3265 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78633

摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

摘要翻译： 提供一种可以防止由于泄漏或其它原因引起的栅极电压变化并且同时可以防止开口率降低的发光器件。 电容器存储器由连接布线，绝缘膜和电容布线形成。 连接布线形成在栅电极和像素的TFT的有源层上，并与有源层连接。 绝缘膜形成在连接布线上。 电容布线形成在绝缘膜上。 这种结构使得电容器存储与TFT重叠，从而在保持开口率降低的同时增加电容器存储的容量。 因此，可以避免由于泄漏或其他原因导致的栅极电压的变化，以防止OLED的亮度变化和模拟驱动中屏幕的闪烁。

公开(公告)号：US20120286320A1

公开(公告)日：2012-11-15

申请号：US13555292

申请日：2012-07-23

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

IPC分类号： H01L27/15

CPC分类号： H01L27/3265 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78633

摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

摘要翻译： 提供一种可以防止由于泄漏或其它原因引起的栅极电压变化并且同时可以防止开口率降低的发光器件。 电容器存储器由连接布线，绝缘膜和电容布线形成。 连接布线形成在栅电极和像素的TFT的有源层上，并与有源层连接。 绝缘膜形成在连接布线上。 电容布线形成在绝缘膜上。 这种结构使得电容器存储与TFT重叠，从而在保持开口率降低的同时增加电容器存储的容量。 因此，可以避免由于泄漏或其他原因导致的栅极电压的变化，以防止OLED的亮度变化和模拟驱动中屏幕的闪烁。

公开(公告)号：US20120012888A1

公开(公告)日：2012-01-19

申请号：US13241351

申请日：2011-09-23

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

IPC分类号： H01L27/15

CPC分类号： H01L27/3265 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78633

摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

公开(公告)号：US07808002B2

公开(公告)日：2010-10-05

申请号：US11773172

申请日：2007-07-03

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

IPC分类号： H01L29/04

CPC分类号： H01L27/3265 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78633

摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

摘要翻译： 提供一种可以防止由于泄漏或其它原因引起的栅极电压变化并且同时可以防止开口率降低的发光器件。 电容器存储器由连接布线，绝缘膜和电容布线形成。 连接布线形成在栅电极和像素的TFT的有源层上，并与有源层连接。 绝缘膜形成在连接布线上。 电容布线形成在绝缘膜上。 这种结构使得电容器存储与TFT重叠，从而在保持开口率降低的同时增加电容器存储的容量。 因此，可以避免由于泄漏或其他原因导致的栅极电压的变化，以防止OLED的亮度变化和模拟驱动中屏幕的闪烁。

公开(公告)号：US08039853B2

公开(公告)日：2011-10-18

申请号：US12879032

申请日：2010-09-10

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

IPC分类号： H01L33/00

CPC分类号： H01L27/3265 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78633

摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

摘要翻译： 提供一种可以防止由于泄漏或其它原因引起的栅极电压变化并且同时可以防止开口率降低的发光器件。 电容器存储器由连接布线，绝缘膜和电容布线形成。 连接布线形成在栅电极和像素的TFT的有源层上，并与有源层连接。 绝缘膜形成在连接布线上。 电容布线形成在绝缘膜上。 这种结构使得电容器存储与TFT重叠，从而在保持开口率降低的同时增加电容器存储的容量。 因此，可以避免由于泄漏或其他原因导致的栅极电压的变化，以防止OLED的亮度变化和模拟驱动中屏幕的闪烁。

公开(公告)号：US20070252150A1

公开(公告)日：2007-11-01

申请号：US11773172

申请日：2007-07-03

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

IPC分类号： H01L29/10

CPC分类号： H01L27/3265 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78633

摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

摘要翻译： 提供一种可以防止由于泄漏或其它原因引起的栅极电压变化并且同时可以防止开口率降低的发光器件。 电容器存储器由连接布线，绝缘膜和电容布线形成。 连接布线形成在栅电极和像素的TFT的有源层上，并与有源层连接。 绝缘膜形成在连接布线上。 电容布线形成在绝缘膜上。 这种结构使得电容器存储与TFT重叠，从而在保持开口率降低的同时增加电容器存储的容量。 因此，可以避免由于泄漏或其他原因导致的栅极电压的变化，以防止OLED的亮度变化和模拟驱动中屏幕的闪烁。

公开(公告)号：US20050092984A1

公开(公告)日：2005-05-05

申请号：US10986931

申请日：2004-11-15

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

IPC分类号： H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L27/32 ,  H01L29/08

CPC分类号： H01L27/3265 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78633

摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

摘要翻译： 提供一种可以防止由于泄漏或其它原因引起的栅极电压变化并且同时可以防止开口率降低的发光器件。 电容器存储器由连接布线，绝缘膜和电容布线形成。 连接布线形成在栅电极和像素的TFT的有源层上，并与有源层连接。 绝缘膜形成在连接布线上。 电容布线形成在绝缘膜上。 这种结构使得电容器存储与TFT重叠，从而在保持开口率降低的同时增加电容器存储的容量。 因此，可以避免由于泄漏或其他原因导致的栅极电压的变化，以防止OLED的亮度变化和模拟驱动中屏幕的闪烁。