公开(公告)号：US20060070702A1

公开(公告)日：2006-04-06

申请号：US11293988

申请日：2005-12-05

申请人： Shusaku Kido ,  Yoshihide Iio ,  Masaki Ikeda

发明人： Shusaku Kido ,  Yoshihide Iio ,  Masaki Ikeda

IPC分类号： H01L21/306 ,  C23C16/00 ,  C23F1/00

CPC分类号： H01L21/67017 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/6715 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/68764

摘要： A substrate processing system which sprays exposure process gas onto a substrate disposed within a chamber. The substrate processing system is used, for example, for performing an exposure process of an organic film formed on a substrate in a gas atmosphere obtained by vaporizing an organic solvent solution for dissolving and reflowing an organic film. The substrate processing system comprises: the chamber having at least one gas inlet and at least one gas outlets; a gas introducing means which introduces the exposure process gas into the chamber via the gas inlet; and a gas distributing means. The gas distributing means separates an inner space of the chamber into a first space into which the exposure process gas is introduced via the gas inlet and a second space in which the substrate is disposed. The gas distributing means has a plurality of openings via which the first space and the second space communicate with each other and introduces the exposure process gas introduced into the first space into the second space via the openings.

公开(公告)号：US20060157199A1

公开(公告)日：2006-07-20

申请号：US11293953

申请日：2005-12-05

申请人： Shusaku Kido ,  Yoshihide Iio ,  Masaki Ikeda

发明人： Shusaku Kido ,  Yoshihide Iio ,  Masaki Ikeda

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67017 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/6715 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/68764

摘要： A substrate processing system which sprays exposure process gas onto a substrate disposed within a chamber. The substrate processing system is used, for example, for performing an exposure process of an organic film formed on a substrate in a gas atmosphere obtained by vaporizing an organic solvent solution for dissolving and reflowing an organic film. The substrate processing system comprises: the chamber having at least one gas inlet and at least one gas outlets; a gas introducing means which introduces the exposure process gas into the chamber via the gas inlet; and a gas distributing means. The gas distributing means separates an inner space of the chamber into a first space into which the exposure process gas is introduced via the gas inlet and a second space in which the substrate is disposed. The gas distributing means has a plurality of openings via which the first space and the second space communicate with each other and introduces the exposure process gas introduced into the first space into the second space via the openings.

公开(公告)号：US20060130759A1

公开(公告)日：2006-06-22

申请号：US11301780

申请日：2005-12-13

申请人： Shusaku Kido ,  Yoshihide Iio ,  Masaki Ikeda

发明人： Shusaku Kido ,  Yoshihide Iio ,  Masaki Ikeda

IPC分类号： C23C16/00

CPC分类号： H01L21/67017 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/6715 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/68764

摘要： A substrate processing system which sprays exposure process gas onto a substrate disposed within a chamber. The substrate processing system is used, for example, for performing an exposure process of an organic film formed on a substrate in a gas atmosphere obtained by vaporizing an organic solvent solution for dissolving and reflowing an organic film. The substrate processing system comprises: the chamber having at least one gas inlet and at least one gas outlets; a gas introducing means which introduces the exposure process gas into the chamber via the gas inlet; and a gas distributing means. The gas distributing means separates an inner space of the chamber into a first space into which the exposure process gas is introduced via the gas inlet and a second space in which the substrate is disposed. The gas distributing means has a plurality of openings via which the first space and the second space communicate with each other and introduces the exposure process gas introduced into the first space into the second space via the openings.

公开(公告)号：US20080121173A1

公开(公告)日：2008-05-29

申请号：US11977040

申请日：2007-10-23

申请人： Shusaku Kido ,  Yoshihide Iio ,  Masaki Ikeda

发明人： Shusaku Kido ,  Yoshihide Iio ,  Masaki Ikeda

IPC分类号： B05C11/06

CPC分类号： H01L21/67017 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/6715 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/68764

摘要： A substrate processing system which sprays exposure process gas onto a substrate disposed within a chamber. The substrate processing system is used, for example, for performing an exposure process of an organic film formed on a substrate in a gas atmosphere obtained by vaporizing an organic solvent solution for dissolving and reflowing an organic film. The substrate processing system comprises: the chamber having at least one gas inlet and at least one gas outlets; a gas introducing means which introduces the exposure process gas into the chamber via the gas inlet; and a gas distributing means. The gas distributing means separates an inner space of the chamber into a first space into which the exposure process gas is introduced via the gas inlet and a second space in which the substrate is disposed. The gas distributing means has a plurality of openings via which the first space and the second space communicate with each other and introduces the exposure process gas introduced into the first space into the second space via the openings.

摘要翻译： 将曝光处理气体喷射到设置在室内的基板上的基板处理系统。 基板处理系统例如用于通过蒸发有机溶剂溶液和有机膜回流获得的气体气氛中进行在基板上形成的有机膜的曝光处理。 衬底处理系统包括：腔室具有至少一个气体入口和至少一个气体出口; 气体引入装置，其通过气体入口将曝光处理气体引入室; 和气体分配装置。 气体分配装置将室的内部空间分隔成经由气体入口引入曝光处理气体的第一空间和设置有基板的第二空间。 气体分配装置具有多个开口，通过该开口，第一空间和第二空间彼此连通，并且经由开口将引入第一空间的曝光处理气体引入第二空间。

公开(公告)号：US20060090853A1

公开(公告)日：2006-05-04

申请号：US11293987

申请日：2005-12-05

申请人： Shusaku Kido ,  Yoshihide Iio ,  Masaki Ikeda

发明人： Shusaku Kido ,  Yoshihide Iio ,  Masaki Ikeda

IPC分类号： H01L21/306

CPC分类号： H01L21/67017 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/6715 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/68764

摘要： A substrate processing system which sprays exposure process gas onto a substrate disposed within a chamber. The substrate processing system is used, for example, for performing an exposure process of an organic film formed on a substrate in a gas atmosphere obtained by vaporizing an organic solvent solution for dissolving and reflowing an organic film. The substrate processing system comprises: the chamber having at least one gas inlet and at least one gas outlets; a gas introducing means which introduces the exposure process gas into the chamber via the gas inlet; and a gas distributing means. The gas distributing means separates an inner space of the chamber into a first space into which the exposure process gas is introduced via the gas inlet and a second space in which the substrate is disposed. The gas distributing means has a plurality of openings via which the first space and the second space communicate with each other and introduces the exposure process gas introduced into the first space into the second space via the openings.

公开(公告)号：US20060090852A1

公开(公告)日：2006-05-04

申请号：US11293962

申请日：2005-12-05

申请人： Shusaku Kido ,  Yoshihide Iio ,  Masaki Ikeda

发明人： Shusaku Kido ,  Yoshihide Iio ,  Masaki Ikeda

IPC分类号： H01L21/306

CPC分类号： H01L21/67017 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/6715 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/68764

摘要： A substrate processing system which sprays exposure process gas onto a substrate disposed within a chamber. The substrate processing system is used, for example, for performing an exposure process of an organic film formed on a substrate in a gas atmosphere obtained by vaporizing an organic solvent solution for dissolving and reflowing an organic film. The substrate processing system comprises: the chamber having at least one gas inlet and at least one gas outlets; a gas introducing means which introduces the exposure process gas into the chamber via the gas inlet; and a gas distributing means. The gas distributing means separates an inner space of the chamber into a first space into which the exposure process gas is introduced via the gas inlet and a second space in which the substrate is disposed. The gas distributing means has a plurality of openings via which the first space and the second space communicate with each other and introduces the exposure process gas introduced into the first space into the second space via the openings.

公开(公告)号：US20080003082A1

公开(公告)日：2008-01-03

申请号：US11819237

申请日：2007-06-26

申请人： Hideto Motoshima ,  Yoshihide Iio ,  Masami Yamashita

发明人： Hideto Motoshima ,  Yoshihide Iio ,  Masami Yamashita

IPC分类号： H01L21/677

CPC分类号： H01L21/6734

摘要： A holding apparatus for a substrate cassette include a support base for holding the cassette with substrates. A tilting device is fixed to the support base for allowing the support base to rotate about a horizontal axis from a horizontal position, wherein top surfaces of the substrates are arranged upwardly, to an over vertical position, wherein the top surfaces of the substrates are arranged downwardly, by rotating the support base over 90 degrees. A storage method for a substrate cassette includes steps of storing a substrate in the cassette for substrates almost horizontally, fixing a cassette on a support base, and rotating the support base around a rotary shaft so that the substrate may rotate to the angle beyond 90 degrees.

摘要翻译： 用于基板盒的保持装置包括用于用基板保持盒的支撑基座。 倾斜装置被固定到支撑基座，用于允许支撑基座围绕水平轴线从水平位置旋转，其中基板的顶表面向上布置到垂直位置，其中基板的顶表面被布置 向下，通过使支撑基座旋转超过90度。 一种用于基板盒的存储方法包括以下步骤：将基板几乎水平地存储在用于基板的盒中，将盒固定在支撑基座上，以及使支撑基座围绕旋转轴旋转，使得基板可以旋转超过90度的角度 。