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1.
公开(公告)号:US08304809B2
公开(公告)日:2012-11-06
申请号:US12292164
申请日:2008-11-13
申请人: Shusuke Kaya , Seikoh Yoshida , Masatoshi Ikeda, legal representative , Sadahiro Kato , Takehiko Nomura , Nariaki Ikeda , Masayuki Iwami , Yoshihiro Sato , Hiroshi Kambayashi , Koh Li
发明人: Shusuke Kaya , Seikoh Yoshida , Sadahiro Kato , Takehiko Nomura , Nariaki Ikeda , Masayuki Iwami , Yoshihiro Sato , Hiroshi Kambayashi , Koh Li
IPC分类号: H01L29/737 , H01L21/28 , H01L21/265
CPC分类号: H01L29/7787 , H01L29/0611 , H01L29/2003 , H01L29/4175 , H01L29/66462
摘要: In a GaN-based semiconductor device, an active layer of a GaN-based semiconductor is formed on a silicon substrate. A trench is formed in the active layer and extends from a top surface of the active layer to a depth reaching the silicon substrate. A first electrode is formed on an internal wall surface of the trench and extends from the top surface of the active layer to the silicon substrate. A second electrode is formed on the active layer to define a current path between the first electrode and the second electrode via the active layer in an on-state of the device. A bottom electrode is formed on a bottom surface of the silicon substrate and defines a bonding pad for the first electrode. The first electrode is formed of metal in direct ohmic contact with both the silicon substrate and the active layer.
摘要翻译: 在GaN基半导体器件中,在硅衬底上形成GaN基半导体的有源层。 在有源层中形成沟槽并从有源层的顶表面延伸到达到硅衬底的深度。 第一电极形成在沟槽的内壁表面上并从有源层的顶表面延伸到硅衬底。 第二电极形成在有源层上,以在器件的导通状态中经由有源层在第一电极和第二电极之间限定电流路径。 底部电极形成在硅衬底的底表面上,并且限定了用于第一电极的焊盘。 第一电极由与硅衬底和有源层直接欧姆接触的金属形成。
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2.
公开(公告)号:US20090140295A1
公开(公告)日:2009-06-04
申请号:US12292164
申请日:2008-11-13
申请人: Shusuke Kaya , Seikoh Yoshida , Sadahiro Kato , Takehiko Nomura , Nariaki Ikeda , Masayuki Iwami , Yoshihiro Sato , Hiroshi Kambayashi , Koh Li
发明人: Shusuke Kaya , Seikoh Yoshida , Sadahiro Kato , Takehiko Nomura , Nariaki Ikeda , Masayuki Iwami , Yoshihiro Sato , Hiroshi Kambayashi , Koh Li
IPC分类号: H01L29/737 , H01L21/28 , H01L21/265
CPC分类号: H01L29/7787 , H01L29/0611 , H01L29/2003 , H01L29/4175 , H01L29/66462
摘要: A GaN-based semiconductor device includes a silicon substrate; an active layer of a GaN-based semiconductor formed on the silicon substrate; a trench formed in the active layer and extending from a top surface of the active layer to the silicon substrate; a first electrode formed on an internal wall surface of the trench so that the first electrode extends from the top surface of the active layer to the silicon substrate; a second electrode formed on the active layer so that a current flows between the first electrode and the second electrode via the active layer; and a bottom electrode formed on a bottom surface of the silicon substrate. The first electrode is formed of a metal capable of being in ohmic contact with the silicon substrate and the active layer.
摘要翻译: GaN基半导体器件包括硅衬底; 形成在硅衬底上的GaN基半导体的有源层; 形成在有源层中并从有源层的顶表面延伸到硅衬底的沟槽; 形成在所述沟槽的内壁表面上的第一电极,使得所述第一电极从所述有源层的顶表面延伸到所述硅衬底; 形成在有源层上的第二电极,使得电流经由有源层在第一电极和第二电极之间流动; 以及形成在硅衬底的底表面上的底部电极。 第一电极由能够与硅衬底和有源层欧姆接触的金属形成。
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