摘要:
A memory device includes a non-volatile memory which allows data to be written, read, and erased electrically and in which writing and reading are done in units of a page and erasing is done in units of a block including a plurality of pages, and a control section that manages access to the non-volatile memory. The control section performs management of access to the non-volatile memory by performing logical address-physical address translation (logical-physical translation) in translation units (TUs) each being an integer fraction of a size of the block and an integer multiple of a page size.
摘要:
A memory device includes a non-volatile memory which allows data to be written, read, and erased electrically and in which writing and reading are done in units of a page and erasing is done in units of a block including a plurality of pages, and a control section that manages access to the non-volatile memory. The control section performs management of access to the non-volatile memory by performing logical address-physical address translation (logical-physical translation) in translation units (TUs) each being an integer fraction of a size of the block and an integer multiple of a page size.
摘要:
If it is determined in step S51 that allocation for an instruction part has been requested and it is determined in step S52 that a memory use amount of an instruction part of an allocation target program exceeds an upper limit, a memory area that is being used by the instruction part of the allocation target program is released in step S53 and memory allocation for the instruction part is performed in step S54. If it is determined in step S52 that the memory use amount of the instruction part of the allocation target program does not exceed the upper limit, the process in step S53 is skipped. If it is determined in step S51 that allocation for a data part is requested, a normal memory allocation process is performed in step S55. The present disclosure may be applied to, for example, an embedded device.