公开(公告)号：US06233178B1

公开(公告)日：2001-05-15

申请号：US09418399

申请日：1999-10-14

申请人： Shyam Krishnamurthy ,  Srinjoy Das ,  Michael Le ,  Frank Van Gieson ,  Surya Bhattacharya ,  Umesh Sharma

发明人： Shyam Krishnamurthy ,  Srinjoy Das ,  Michael Le ,  Frank Van Gieson ,  Surya Bhattacharya ,  Umesh Sharma

IPC分类号： G11C700

CPC分类号： G11C16/107 ,  G11C16/10 ,  G11C16/16

摘要： Pre-conditioning method and apparatus for mitigating erase-induced stress within flash memory devices are disclosed. The pre-condition method includes subjecting flash memory cell to a short write process to at least partially discharge the cells. The pre-condition process is applied to an entire sector at one time, and is performed immediately prior to erasing (charging) the cells within the sector.

摘要翻译： 公开了用于减轻闪速存储器件内的擦除引起的应力的预调节方法和装置。 前提条件方法包括使闪速存储器单元进行短写入处理以至少部分地对单元进行放电。 预条件处理一次应用于整个扇区，并且在擦除（充电）扇区内的单元之前立即执行。