公开(公告)号：US08446775B2

公开(公告)日：2013-05-21

申请号：US12905280

申请日：2010-10-15

申请人： Si-Hwan Kim ,  Joon-Suc Jang ,  Duck-Kyun Woo

发明人： Si-Hwan Kim ,  Joon-Suc Jang ,  Duck-Kyun Woo

IPC分类号： G11C16/04

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/3468

摘要： To program a semiconductor memory device, a plurality of target threshold voltage groups are set by dividing target threshold voltages representing states of memory cells. The target threshold voltage groups are substantially simultaneously programmed by applying a plurality of program voltages to a word line. Program end times for the target threshold voltage groups are adjusted.

摘要翻译： 为了对半导体存储器件进行编程，通过划分表示存储器单元状态的目标阈值电压来设置多个目标阈值电压组。 目标阈值电压组通过将多个编程电压施加到字线而基本上同时编程。 调整目标阈值电压组的程序结束时间。

公开(公告)号：US20110103151A1

公开(公告)日：2011-05-05

申请号：US12905280

申请日：2010-10-15

申请人： Si-Hwan Kim ,  Joon-Suc Jang ,  Duck-Kyun Woo

发明人： Si-Hwan Kim ,  Joon-Suc Jang ,  Duck-Kyun Woo

IPC分类号： G11C16/04

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/3468

摘要： To program a semiconductor memory device, a plurality of target threshold voltage groups are set by dividing target threshold voltages representing states of memory cells. The target threshold voltage groups are substantially simultaneously programmed by applying a plurality of program voltages to a word line. Program end times for the target threshold voltage groups are adjusted.

摘要翻译： 为了对半导体存储器件进行编程，通过划分表示存储器单元状态的目标阈值电压来设置多个目标阈值电压组。 目标阈值电压组通过将多个编程电压施加到字线而基本上同时编程。 调整目标阈值电压组的程序结束时间。

公开(公告)号：US08385120B2

公开(公告)日：2013-02-26

申请号：US12910063

申请日：2010-10-22

申请人： Joon-Suc Jang ,  Ki-Hwan Choi ,  Duck-Kyun Woo ,  Si-Hwan Kim

发明人： Joon-Suc Jang ,  Ki-Hwan Choi ,  Duck-Kyun Woo ,  Si-Hwan Kim

IPC分类号： G11C16/04

CPC分类号： G11C16/0483 ,  G11C16/3418

摘要： A method of programming a nonvolatile memory device is provided. The method includes providing a plurality of memory cells coupled to a wordline, the plurality of memory cells grouped into a plurality of groups, each group including at least two memory cells, such that for each cell of the plurality of memory cells that has memory cells adjacent both sides, the memory cells immediately adjacent either side of the cell belong to different groups from each other. The method further includes selecting one group from the plurality of groups, and performing a program operation including applying a program pulse to the selected group while one or more non-selected groups of the plurality of groups are inhibited from being programmed.

摘要翻译： 提供了一种编程非易失性存储器件的方法。 所述方法包括提供耦合到字线的多个存储器单元，所述多个存储器单元分组成多个组，每个组包括至少两个存储器单元，使得对于具有存储器单元的多个存储器单元中的每个单元 相邻两侧，紧邻细胞两侧的存储单元彼此不同。 该方法还包括从多个组中选择一个组，并且执行编程操作，包括在禁止编程多个组中的一个或多个未选择的组时将编程脉冲施加到所选择的组。

公开(公告)号：US08499210B2

公开(公告)日：2013-07-30

申请号：US12943369

申请日：2010-11-10

申请人： Si-Hwan Kim ,  Joon-Suc Jang ,  Ki-Hwan Choi ,  Duck-Kyun Woo

发明人： Si-Hwan Kim ,  Joon-Suc Jang ,  Ki-Hwan Choi ,  Duck-Kyun Woo

IPC分类号： H03M13/00

CPC分类号： G11C11/5628 ,  G06F11/1072 ,  G11C11/5642 ,  G11C16/0483 ,  G11C2029/0411

摘要： A flash memory device includes a plurality of memory cells each configured to store k-bit data, where k is a natural number greater than one. The device is programmed by a method including reading (i−1)-th order data from a selected memory cell connected to a selected wordline before programming i-th order data in one or more adjacent memory cells connected to an adjacent wordline, wherein i is a natural number between two and k, storing as read data the (i−1)-th order data read from the selected memory cell, and programming i-th order data in the selected memory cell based on the stored read data.

摘要翻译： 闪存器件包括多个存储器单元，每个存储器单元被配置为存储k位数据，其中k是大于1的自然数。 该装置通过一种方法来编程，包括在连接到相邻字线的一个或多个相邻存储器单元中编程i阶数据之前从连接到选定字线的选定存储单元读取（i-1）数据，其中i 是两个和k之间的自然数，作为读取数据存储从所选择的存储单元读取的（i-1）数据数据，以及基于所存储的读取数据在所选择的存储器单元中编程i阶数据。

公开(公告)号：US20110122697A1

公开(公告)日：2011-05-26

申请号：US12910063

申请日：2010-10-22

申请人： Joon-Suc Jang ,  Ki-Hwan Choi ,  Duck-Kyun Woo ,  Si-Hwan Kim

发明人： Joon-Suc Jang ,  Ki-Hwan Choi ,  Duck-Kyun Woo ,  Si-Hwan Kim

IPC分类号： G11C16/12 ,  G11C16/04 ,  G11C16/34

CPC分类号： G11C16/0483 ,  G11C16/3418

摘要： A method of programming a nonvolatile memory device is disclosed. The method includes providing a plurality of memory cells coupled to a wordline, the plurality of memory cells grouped into a plurality of groups, each group including at least two memory cells, such that for each cell of the plurality of memory cells that has memory cells adjacent both sides, the memory cells immediately adjacent either side of the cell belong to different groups from each other. The method further includes selecting one group from the plurality of groups, and performing a program operation including applying a program pulse to the selected group while one or more non-selected groups of the plurality of groups are inhibited from being programmed.

摘要翻译： 公开了一种非易失性存储器件的编程方法。 所述方法包括提供耦合到字线的多个存储器单元，所述多个存储器单元分组成多个组，每个组包括至少两个存储器单元，使得对于具有存储器单元的多个存储器单元中的每个单元 相邻两侧，紧邻细胞两侧的存储单元彼此不同。 该方法还包括从多个组中选择一个组，并且执行编程操作，包括在禁止编程多个组中的一个或多个未选择的组时将编程脉冲施加到所选择的组。