公开(公告)号：US20240414894A1

公开(公告)日：2024-12-12

申请号：US18696740

申请日：2022-09-16

Applicant: Siemens Aktiengesellschaft

Inventor： VOLKER MÜLLER ,  STEPHAN NEUGEBAUER ,  FLORIAN SCHWARZ ,  VLADIMIR DANOV ,  STEFAN STEGMEIER

IPC: H05K7/20

Abstract: A mount includes a first metal element having a first surface for connection to a heat source, and a second metal element having a second surface for connection to a heat sink. A body made of plastic, glass or ceramic is arranged so as to abut against the first and second metal elements. The body includes through-openings which extend from a region of the first surface to a region of the second surface. The mount includes grooves in the region of the first surface and in the region of the second surface. The grooves extend over two of the through-openings. The first and second metal elements are arranged on the body such that a closed cooling channel is formed by the through-openings, the grooves and the first and second metal elements.

公开(公告)号：US20250157878A1

公开(公告)日：2025-05-15

申请号：US18720278

申请日：2022-11-08

Applicant: Siemens Aktiengesellschaft

Inventor： VLADIMIR DANOV ,  STEFAN PFEFFERLEIN ,  FLORIAN SCHWARZ ,  STEFAN STEGMEIER

IPC: H01L23/427 ,  H01L21/48 ,  H05K7/20

Abstract: An electronics module includes a pulsating heat pipe having a main body and a channel structure which is at least partially formed in the main body and in which a heat transfer medium is arranged. The main body includes a recess and is made at least partially of a dielectric material. An electronic component is thermally conductively connected to the heat transfer medium and designed as a vertical power semiconductor. A metal rib is secured in the recess and designed to protrude over a surface of the main body. The metal rib is in direct contact with the heat transfer medium.

公开(公告)号：US20250112142A1

公开(公告)日：2025-04-03

申请号：US18834521

申请日：2022-11-28

Applicant: Siemens Aktiengesellschaft

Inventor： MARKUS LASCH ,  ROLAND LORZ ,  MARKUS PFEIFER ,  STEFAN STEGMEIER ,  ERIK WEISBROD ,  RONNY WERNER ,  FELIX ZEYSS

IPC: H01L23/498 ,  H05K1/05

Abstract: An arrangement for a semiconductor arrangement includes a substrate including a dielectric material layer and a first metallization arranged on the dielectric material layer. A passive component is arranged completely in a cutout of the first metallization and bears directly on the dielectric material layer. The passive component is designed to include a first profile. The the first metallization includes a second profile in a region of contacting with the passive component, with the first and second profiles engaging with one another.

公开(公告)号：US20250118633A1

公开(公告)日：2025-04-10

申请号：US18836264

申请日：2023-01-12

Applicant: Siemens AKtiengesellschaft

Inventor： Alexander Hensel ,  STEFAN STEGMEIER ,  CLAUS FLORIAN WAGNER ,  MICHAEL WOITON

IPC: H01L23/485 ,  C23C4/06 ,  C23C4/134 ,  H01L21/60 ,  H01L23/49

Abstract: A semiconductor arrangement includes a semiconductor element having a connection element, and a metallic contacting element connected flatly to the connection element of the semiconductor element by being sprayed onto the semiconductor element via a thermal spraying method involving atmospheric plasma spraying. The metallic contacting element incudes first and second particles which form a textured layer, with the first particles deformed in a planar-like manner and with the second particles being melted second particles, said first particles being at least five times larger than the second particles.