-
1.
公开(公告)号:US20240266312A1
公开(公告)日:2024-08-08
申请号:US18579130
申请日:2022-06-13
发明人: BERND KÜRTEN , FELIX ZEYSS
IPC分类号: H01L23/00
CPC分类号: H01L24/45 , H01L24/43 , H01L24/46 , H01L2224/46 , H01L2224/48091 , H01L2224/48101
摘要: A semiconductor arrangement includes a substrate, a semiconductor element connected to the substrate and including on a side remote from the substrate a contact surface which is connected to the substrate via a first bond connecting means such that as to form on the contact surface a stitch contact arranged between a first loop and a second loop of the first bond connecting means. The first loop has a first maximum and the second loop has a second maximum. A second bond connecting means has a first transverse arranged to run above the first stitch contact and, viewed running parallel to the contact surface, between the first maximum of the first loop and the second maximum of the second loop. The first transverse loop of the second bond connecting means is arranged to run below the first maximum of the first loop and/or the second maximum of the second loop.
-
2.
公开(公告)号:US20220060122A1
公开(公告)日:2022-02-24
申请号:US17405712
申请日:2021-08-18
发明人: ROBERT GOSPOS , LUTZ NAMYSLO , BERND KÜRTEN , FELIX ZEYSS , MICHAEL ENDRES , SILVIO HÖHNE , PIETRO BOTAZZOLI
摘要: A power module includes at least two power semiconductor arrangements, each having at least one semiconductor component, in contact with substrate and arranged in a housing. To improve the reliability of the power module, a first power connector and a second power connector are arranged on a first side of the housing and at least one other power connector is arranged on an opposing second side of the housing. Supply lines extending from the power connectors to the power semiconductor arrangements are arranged on the substrate in such a manner that electrical current is provided in a symmetrical manner.
-
公开(公告)号:US20240096844A1
公开(公告)日:2024-03-21
申请号:US18265578
申请日:2021-10-13
发明人: PHILIPP KNEISSL , FELIX ZEYSS , MARKUS PFEIFER
CPC分类号: H01L24/45 , H01L23/34 , H01L24/48 , H01L25/16 , H01L2224/45015 , H01L2224/4556 , H01L2224/45565 , H01L2224/48227 , H01L2924/13055 , H01L2924/13091
摘要: A semiconductor module includes a semiconductor element, a substrate, and a bond connector designed as a gate resistor, shunt, resistor in an RC filter or fuse. The bond connector includes a core made of a first metal material and a jacket which is designed to envelope the core and made from a second metal material that is different from the first metal material, with the first metal material having an electrical conductivity which is lower than an electrical conductivity of the second metal material. At least one of the semiconductor element and the substrate is connected to the bond connector.
-
公开(公告)号:US20240038618A1
公开(公告)日:2024-02-01
申请号:US18265905
申请日:2021-11-03
发明人: Stefan Pfefferlein , FELIX ZEYSS
IPC分类号: H01L23/367 , H01L23/373 , H01L23/40
CPC分类号: H01L23/3672 , H01L23/3735 , H01L23/40
摘要: A semiconductor module includes a semiconductor element having a first side in contact with a first substrate in a planar manner, and a second side which faces away from the first side and contacts a metallic heat sink in a planar manner. The heat sink is in thermally conductive connection with the semiconductor element and connected to the second substrate in an electrically conductive manner. The heat sink includes a main body for planar contacting of the semiconductor element and a fin arranged in a recess of the second substrate. The second substrate is connected in an electrically conductive manner to the main body which has a circumferential contact surface around the fin to establish a material-bonded connection with a substrate metallization of the second substrate. The circumferential contact surface is arranged on a side of the main body facing away from the semiconductor element.
-
-
-