SEMICONDUCTOR ARRANGEMENT COMPRISING A SEMICONDUCTOR ELEMENT, A SUBSTRATE AND BOND CONNECTING MEANS

    公开(公告)号:US20240266312A1

    公开(公告)日:2024-08-08

    申请号:US18579130

    申请日:2022-06-13

    IPC分类号: H01L23/00

    摘要: A semiconductor arrangement includes a substrate, a semiconductor element connected to the substrate and including on a side remote from the substrate a contact surface which is connected to the substrate via a first bond connecting means such that as to form on the contact surface a stitch contact arranged between a first loop and a second loop of the first bond connecting means. The first loop has a first maximum and the second loop has a second maximum. A second bond connecting means has a first transverse arranged to run above the first stitch contact and, viewed running parallel to the contact surface, between the first maximum of the first loop and the second maximum of the second loop. The first transverse loop of the second bond connecting means is arranged to run below the first maximum of the first loop and/or the second maximum of the second loop.

    SEMICONDUCTOR MODULE COMPRISING AT LEAST ONE SEMICONDUCTOR ELEMENT

    公开(公告)号:US20240038618A1

    公开(公告)日:2024-02-01

    申请号:US18265905

    申请日:2021-11-03

    摘要: A semiconductor module includes a semiconductor element having a first side in contact with a first substrate in a planar manner, and a second side which faces away from the first side and contacts a metallic heat sink in a planar manner. The heat sink is in thermally conductive connection with the semiconductor element and connected to the second substrate in an electrically conductive manner. The heat sink includes a main body for planar contacting of the semiconductor element and a fin arranged in a recess of the second substrate. The second substrate is connected in an electrically conductive manner to the main body which has a circumferential contact surface around the fin to establish a material-bonded connection with a substrate metallization of the second substrate. The circumferential contact surface is arranged on a side of the main body facing away from the semiconductor element.