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1.发明申请HETEROJUNCTION SOLAR CELL BASED ON EPITAXIAL CRYSTALLINE-SILICON THIN FILM ON METALLURGICAL SILICON SUBSTRATE DESIGN 审中-公开基于金属硅基底板上的外延晶体硅薄膜的异相太阳能电池公开(公告)号：US20150040975A1
公开(公告)日：2015-02-12
申请号：US14525140
申请日：2014-10-27
Applicant: Silevo, Inc.
Inventor： Chentao Yu , Jiunn Benjamin Heng , Zheng Xu , Jianming Fu , Jianjun Liang
IPC: H01L31/0747 , H01L31/18 , H01L31/20 , H01L31/0236
CPC classification number: H01L31/0747 , H01L31/02363 , H01L31/18 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02P70/521
Abstract: One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer.
Abstract translation: 本发明的一个实施例提供了异质结太阳能电池。 太阳能电池包括冶金级Si（MG-Si）衬底，位于MG-Si衬底上方的重掺杂晶体层Si，位于重掺杂晶体Si层上方的轻掺杂晶体层Si， 位于MG-Si衬底背面的背面欧姆接触层，位于重掺杂晶体Si层上方的钝化层，位于钝化层上方的重掺杂非晶Si层（a-Si）层， 位于重掺杂的a-Si层上方的透明导电氧化物（TCO）和位于TCO层上方的前欧姆接触电极。
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2.发明授权Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design 有权异质结太阳能电池基于外延晶体硅薄膜在冶金硅基板上的设计公开(公告)号：US08872020B2
公开(公告)日：2014-10-28
申请号：US13626740
申请日：2012-09-25
Applicant: Silevo, Inc.
Inventor： Chentao Yu , Jiunn Benjamin Heng , Zheng Xu , Jianming Fu , Jianjun Liang
IPC: H01L31/00 , H01L31/18 , H01L31/20 , H01L31/0747
CPC classification number: H01L31/0747 , H01L31/02363 , H01L31/18 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02P70/521
Abstract: One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer.
Abstract translation: 本发明的一个实施例提供了异质结太阳能电池。 太阳能电池包括冶金级Si（MG-Si）衬底，位于MG-Si衬底上方的重掺杂晶体层Si，位于重掺杂晶体Si层上方的轻掺杂晶体层Si， 位于MG-Si衬底背面的背面欧姆接触层，位于重掺杂晶体Si层上方的钝化层，位于钝化层上方的重掺杂非晶Si层（a-Si）层， 位于重掺杂的a-Si层上方的透明导电氧化物（TCO）和位于TCO层上方的前欧姆接触电极。
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公开(公告)号：US20130112265A1
公开(公告)日：2013-05-09
申请号：US13626740
申请日：2012-09-25
Applicant: SILEVO, INC.
Inventor： Chentao Yu , Jiunn Benjamin Heng , Zheng Xu , Jianming Fu , Jianjun Liang
IPC: H01L31/0747 , H01L31/18
CPC classification number: H01L31/0747 , H01L31/02363 , H01L31/18 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02P70/521
Abstract: One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer.
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