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    MOISTURE INGRESS RESISTANT PHOTOVOLTAIC MODULE
    3.
    发明申请
    MOISTURE INGRESS RESISTANT PHOTOVOLTAIC MODULE 审中-公开
    防潮耐光照明模块

    公开(公告)号：US20140345674A1

    公开(公告)日：2014-11-27

    申请号：US14286823

    申请日：2014-05-23

    Applicant: Silevo, Inc.

    Inventor： Bobby Yang ,  Jiunn Benjamin Heng ,  Jianming Fu ,  Zheng Xu

    IPC: H01L31/048 ,  H01L31/18

    CPC classification number: H02S40/34 ,  B32B27/08 ,  B32B2457/12 ,  H01L31/02013 ,  H01L31/049 ,  H01L31/0747 ,  Y02E10/50

    Abstract: One embodiment of the present invention provides a photovoltaic (PV) module. The PV module includes a front-side glass cover facing sunlight, a plurality of interconnected PV cells situated below the glass cover, a plurality of bussing wires electrically coupled to the PV cells, and a back-sheet situated below the PV cells. The back-sheet comprises a metal layer sandwiched between a top and a bottom insulation layers. The back-sheet comprises a cut slot to facilitate the bussing wires to thread through the cut slot to reach a junction box situated below the back-sheet. The PV module further comprises one or more insulation layers inserted between the bussing wires and sidewalls of the cut slot in the back-sheet. The insulation layers are configured to insulate the bussing wires to the metal layer in the back-sheet.

    Abstract translation: 本发明的一个实施例提供一种光伏（PV）模块。 PV模块包括面向日光的前侧玻璃盖，位于玻璃盖下方的多个互连的PV电池，电耦合到PV电池的多个汇流线，以及位于PV电池下方的背板。 背板包括夹在顶部和底部绝缘层之间的金属层。 背板包括切口槽，以便于总线线穿过切割槽以到达位于底片下方的接线盒。 PV模块还包括一个或多个绝缘层，其插入在总线与背板中的切口槽的侧壁之间。 绝缘层被构造成使总线与底片中的金属层绝缘。

    NOVEL ELECTRON COLLECTORS FOR SILICON PHOTOVOLTAIC CELLS
    4.
    发明申请
    NOVEL ELECTRON COLLECTORS FOR SILICON PHOTOVOLTAIC CELLS 审中-公开
    用于硅光电池的新型电子收集器

    公开(公告)号：US20140102524A1

    公开(公告)日：2014-04-17

    申请号：US14054688

    申请日：2013-10-15

    Applicant: Silevo, Inc.

    Inventor： Zhigang Xie ,  Jiunn Benjamin Heng ,  Wei Wang ,  Jianming Fu ,  Zheng Xu

    IPC: H01L31/0352 ,  H01L31/18

    CPC classification number: H01L31/035209 ,  H01L31/065 ,  H01L31/072 ,  H01L31/0747 ,  H01L31/1884 ,  Y02E10/50

    Abstract: One embodiment of the present invention provides a solar cell. The solar cell includes a base layer comprising crystalline Si (c-Si), an electron collector situated on a first side of the base layer, and a hole collector situated on a second side of the base layer, which is opposite the first side. The electron collector includes a quantum-tunneling-barrier (QTB) layer situated adjacent to the base layer and a transparent conducting oxide (TCO) layer situated adjacent to the QTB layer. The TCO layer has a work function of less than 4.2 eV.

    Abstract translation: 本发明的一个实施例提供一种太阳能电池。 太阳能电池包括基底层，该基底层包含晶体Si（c-Si），位于基底层第一侧的电子收集体和位于第一侧相对的基底层的第二侧的孔收集体。 电子收集器包括邻近基极层的量子隧道势垒（QTB）层和邻近QTB层的透明导电氧化物（TCO）层。 TCO层具有小于4.2eV的功函数。

    HETEROJUNCTION SOLAR CELL BASED ON EPITAXIAL CRYSTALLINE-SILICON THIN FILM ON METALLURGICAL SILICON SUBSTRATE DESIGN
    6.
    发明申请
    HETEROJUNCTION SOLAR CELL BASED ON EPITAXIAL CRYSTALLINE-SILICON THIN FILM ON METALLURGICAL SILICON SUBSTRATE DESIGN 审中-公开
    基于金属硅基底板上的外延晶体硅薄膜的异相太阳能电池

    公开(公告)号：US20150040975A1

    公开(公告)日：2015-02-12

    申请号：US14525140

    申请日：2014-10-27

    Applicant: Silevo, Inc.

    Inventor： Chentao Yu ,  Jiunn Benjamin Heng ,  Zheng Xu ,  Jianming Fu ,  Jianjun Liang

    IPC: H01L31/0747 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0236

    CPC classification number: H01L31/0747 ,  H01L31/02363 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

    Abstract: One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer.

    Abstract translation: 本发明的一个实施例提供了异质结太阳能电池。 太阳能电池包括冶金级Si（MG-Si）衬底，位于MG-Si衬底上方的重掺杂晶体层Si，位于重掺杂晶体Si层上方的轻掺杂晶体层Si， 位于MG-Si衬底背面的背面欧姆接触层，位于重掺杂晶体Si层上方的钝化层，位于钝化层上方的重掺杂非晶Si层（a-Si）层， 位于重掺杂的a-Si层上方的透明导电氧化物（TCO）和位于TCO层上方的前欧姆接触电极。

    Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design
    7.
    发明授权
    Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design 有权
    异质结太阳能电池基于外延晶体硅薄膜在冶金硅基板上的设计

    公开(公告)号：US08872020B2

    公开(公告)日：2014-10-28

    申请号：US13626740

    申请日：2012-09-25

    Applicant: Silevo, Inc.

    Inventor： Chentao Yu ,  Jiunn Benjamin Heng ,  Zheng Xu ,  Jianming Fu ,  Jianjun Liang

    IPC: H01L31/00 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0747

    CPC classification number: H01L31/0747 ,  H01L31/02363 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

    Abstract: One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer.

    Abstract translation: 本发明的一个实施例提供了异质结太阳能电池。 太阳能电池包括冶金级Si（MG-Si）衬底，位于MG-Si衬底上方的重掺杂晶体层Si，位于重掺杂晶体Si层上方的轻掺杂晶体层Si， 位于MG-Si衬底背面的背面欧姆接触层，位于重掺杂晶体Si层上方的钝化层，位于钝化层上方的重掺杂非晶Si层（a-Si）层， 位于重掺杂的a-Si层上方的透明导电氧化物（TCO）和位于TCO层上方的前欧姆接触电极。

    MODULE FABRICATION OF SOLAR CELLS WITH LOW RESISTIVITY ELECTRODES
    9.
    发明申请
    MODULE FABRICATION OF SOLAR CELLS WITH LOW RESISTIVITY ELECTRODES 有权
    具有低电阻电极的太阳能电池的模块化制造

    公开(公告)号：US20140196768A1

    公开(公告)日：2014-07-17

    申请号：US14153608

    申请日：2014-01-13

    Applicant: Silevo, Inc.

    Inventor： Jiunn Benjamin Heng ,  Jianming Fu ,  Zheng Xu ,  Bobby Yang

    IPC: H01L31/0224

    CPC classification number: H01L31/0201 ,  H01L31/02021 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/048 ,  H01L31/0488 ,  H01L31/0504 ,  H01L31/0684 ,  H01L31/0747 ,  H01L31/1876 ,  Y02E10/547

    Abstract: One embodiment of the present invention provides a solar module. The solar module includes a front-side cover, a back-side cover, and a plurality of solar cells situated between the front- and back-side covers. A respective solar cell includes a multi-layer semiconductor structure, a front-side electrode situated above the multi-layer semiconductor structure, and a back-side electrode situated below the multi-layer semiconductor structure. Each of the front-side and the back-side electrodes comprises a metal grid. A respective metal grid comprises a plurality of finger lines and a single busbar coupled to the finger lines. The single busbar is configured to collect current from the finger lines.

    Abstract translation: 本发明的一个实施例提供一种太阳能模块。 太阳能组件包括前侧盖，后侧盖和位于前侧盖和后盖之间的多个太阳能电池。 各个太阳能电池包括多层半导体结构，位于多层半导体结构之上的前侧电极和位于多层半导体结构下方的背面电极。 前侧和后侧电极中的每一个包括金属网格。 相应的金属网格包括多个指状线和耦合到指线的单个母线。 单个母线被配置为从指线收集电流。

    PHOTOVOLTAIC DEVICES WITH ELECTROPLATED METAL GRIDS
    10.
    发明申请
    PHOTOVOLTAIC DEVICES WITH ELECTROPLATED METAL GRIDS 有权
    具有电镀金属网格的光伏器件

    公开(公告)号：US20140096823A1

    公开(公告)日：2014-04-10

    申请号：US14045163

    申请日：2013-10-03

    Applicant: Silevo, Inc.

    Inventor： Jianming Fu ,  Jiunn Benjamin Heng ,  Christopher J. Beitel ,  Zheng Xu

    IPC: H01L31/0224 ,  H01L31/18

    CPC classification number: H01L31/022433 ,  H01L31/0201 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547

    Abstract: One embodiment of the present invention provides a solar cell. The solar cell includes a photovoltaic structure and a front-side metal grid situated above the photovoltaic structure. The front-side metal grid also includes one or more electroplated metal layers. The front-side metal grid includes one or more finger lines, and each end of a respective finger line is coupled to a corresponding end of an adjacent finger line via an additional metal line, thus ensuring that the respective finger line has no open end.

    Abstract translation: 本发明的一个实施例提供一种太阳能电池。 太阳能电池包括位于光伏结构上方的光伏结构和前侧金属栅格。 前侧金属网格还包括一个或多个电镀金属层。 前侧金属网格包括一根或多根指状线，并且相应指状线的每一端经由附加金属线耦合到相邻指状线的对应端，从而确保相应的指线不具有开放端。

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