公开(公告)号：US10415149B2

公开(公告)日：2019-09-17

申请号：US15920001

申请日：2018-03-13

申请人： Silfex, Inc.

发明人： George David Stephen Hudelson ,  Igor Peidous ,  Haresh Siriwardane ,  Steven M. Joslin ,  Jihong Chen

IPC分类号： C30B15/02 ,  C30B11/10 ,  C30B11/00 ,  C30B29/06 ,  C30B29/64

摘要： A system comprises a silicon seed arranged on a pedestal, where the silicon seed is ring shaped and is configured to receive melted silicon at a feed rate to form an ingot, and where the pedestal is configured to rotate at a rotational speed. A controller is configured to, while the silicon seed receives the melted silicon and while the ingot is forming: receive feedback regarding a diameter of the ingot and regarding an angle of a meniscus of the ingot, and control the rotational speed of the pedestal and the feed rate of the melted silicon based on the feedback to control the diameter of the ingot and the angle of the meniscus of the ingot.

公开(公告)号：US20180282898A1

公开(公告)日：2018-10-04

申请号：US15920001

申请日：2018-03-13

申请人： Silfex, Inc.

发明人： George David Stephen Hudelson ,  Igor Peidous ,  Haresh Siriwardane ,  Steven M. Joslin ,  Jihong Chen

IPC分类号： C30B11/10 ,  C30B11/00 ,  C30B29/06

CPC分类号： C30B11/10 ,  C30B11/001 ,  C30B11/002 ,  C30B11/006 ,  C30B29/06 ,  C30B29/64

摘要： A system comprises a silicon seed arranged on a pedestal, where the silicon seed is ring shaped and is configured to receive melted silicon at a feed rate to form an ingot, and where the pedestal is configured to rotate at a rotational speed. A controller is configured to, while the silicon seed receives the melted silicon and while the ingot is forming: receive feedback regarding a diameter of the ingot and regarding an angle of a meniscus of the ingot, and control the rotational speed of the pedestal and the feed rate of the melted silicon based on the feedback to control the diameter of the ingot and the angle of the meniscus of the ingot