METHOD FOR TEMPERATURE COMPENSATION IN MEMS RESONATORS WITH ISOLATED REGIONS OF DISTINCT MATERIAL
    1.
    发明申请
    METHOD FOR TEMPERATURE COMPENSATION IN MEMS RESONATORS WITH ISOLATED REGIONS OF DISTINCT MATERIAL 有权
    具有隔离材料隔离区域的MEMS谐振器中的温度补偿方法

    公开(公告)号:US20150266724A1

    公开(公告)日:2015-09-24

    申请号:US13901258

    申请日:2013-05-23

    Abstract: MEMS resonators containing a first material and a second material to tailor the resonator's temperature coefficient of frequency (TCF). The first material has a different Young's modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material.

    Abstract translation: 包含第一材料和第二材料的MEMS谐振器以调整谐振器的频率温度系数(TCF)。 第一种材料具有与第二种材料不同的杨氏模量温度系数。 在一个实施例中,第一材料具有负杨氏模量温度系数,第二材料具有正的杨氏模量温度系数。 在一个这样的实施例中,第一材料是半导体,第二材料是电介质。 在另一实施例中,谐振器中的第二材料的数量和位置被调整为满足特定应用的谐振器TCF规格。 在一个实施例中,第二材料被隔离到谐振器附近的最大应力点处的谐振器的区域。 在特定实施例中,谐振器包括具有包含第二材料的沟槽的第一材料。

Patent Agency Ranking