公开(公告)号：US20200034080A1

公开(公告)日：2020-01-30

申请号：US16255925

申请日：2019-01-24

Applicant: Silicon Motion, Inc.

Inventor： Liang-Cheng CHEN

IPC: G06F3/06 ,  G11C29/44

Abstract: Multi-channel accessing of non-volatile memory. A controller uses three kinds of tables to manage cross-channel accessing areas and, accordingly, to access the non-volatile memory through multiple channels. Each cross-channel accessing area includes M storage units, where M is an integer greater than 1. For each cross-channel accessing area, the first table marks whether there is a need for storage unit substitution and points to substitution information. The substitution information is stored in the second table and the third table. For each cross-channel accessing area marked in the first table, the second table stores M bits corresponding to M storage units of the marked cross-channel accessing area for substitution indication, and related substitute storage unit indication is stored in the third table.

公开(公告)号：US20200098423A1

公开(公告)日：2020-03-26

申请号：US16524113

申请日：2019-07-28

Applicant: Silicon Motion, Inc.

Inventor： Chien-Ting HUANG ,  Liang-Cheng CHEN

IPC: G11C11/419 ,  G11C11/22 ,  G11C11/56 ,  G06F12/02 ,  G06F13/16

Abstract: High-efficiency control technology for non-volatile memory. A non-volatile memory has single level cells (SLCs) and multiple level cells (e.g., MLCs or TLCs) and is controlled by a controller. According to the controller at the device end, a host allocates a system memory to provide a host memory buffer (HMB). The controller at the device end uses the HMB to buffer write data issued by the host, and then flushes the write data from the HMB to multi-level cells of the non-volatile memory without passing single level cells of the non-volatile memory to reduce write amplification problems due to the frequent use of the single-level cells.