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公开(公告)号：US20210167762A1
公开(公告)日：2021-06-03
申请号：US16838847
申请日：2020-04-02
Applicant: Silicon Storage Technology, Inc.
Inventor： Ryan Mei , XIAOZHOU QIAN , HIEU VAN TRAN , CLAIRE ZHU
IPC: H03K3/356 , H03K19/0185 , H03K19/003 , H03K19/185
Abstract: An improved level shifter is disclosed. The level shifter is able to achieve a switching time below 1 ns using a relatively low voltage for VDDL, such as 0.75V. The improved level shifter comprises a coupling stage and a level-switching stage. A related method of level shifting is also disclosed.
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