公开(公告)号：US20200176060A1

公开(公告)日：2020-06-04

申请号：US16783286

申请日：2020-02-06

Applicant: Silicon Storage Technology, Inc.

Inventor： VIPIN TIWARI ,  NHAN DO ,  HIEU VAN TRAN

IPC: G11C16/10 ,  G11C11/56 ,  G11C16/04 ,  H01L29/423 ,  H01L29/788

Abstract: An improved programming technique for non-volatile memory cell arrays, in which memory cells to be programmed with higher programming values are programmed first, and memory cells to be programmed with lower programming values are programmed second. The technique reduces or eliminates the number of previously programmed cells from being adversely incrementally programmed by an adjacent cell being programmed to higher program levels, and reduces the magnitude of adverse incremental programming for most of the memory cells, which is caused by floating gate to floating gate coupling. The memory device includes an array of non-volatile memory cells and a controller configured to identify programming values associated with incoming data, and perform a programming operation in which the incoming data is programmed into at least some of the non-volatile memory cells in a timing order of descending value of the programming values.

公开(公告)号：US20170316823A1

公开(公告)日：2017-11-02

申请号：US15404087

申请日：2017-01-11

Applicant: Silicon Storage Technology, Inc. ,  Agency For Science, Technology And Research

Inventor： Feng Zhou ,  XIAN LIU ,  NHAN DO ,  HIEU VAN TRAN ,  HUNG QUOC NGUYEN ,  MARK REITEN ,  ZHIXIAN CHEN ,  WANG XINPENG ,  GUO-QIANG LO

IPC: G11C13/00 ,  H01L45/00

CPC classification number: G11C13/0007 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16

Abstract: A memory device and method comprising a metal oxide material disposed between and in electrical contact with first and second conductive electrodes, and a voltage source configured to apply a plurality of voltage pulses spaced apart in time across the first and second electrodes. For each one of the voltage pulses, an amplitude of the voltage increases during the voltage pulse.

公开(公告)号：US20240282351A1

公开(公告)日：2024-08-22

申请号：US18195322

申请日：2023-05-09

Applicant: Silicon Storage Technology, Inc.

Inventor： HIEU VAN TRAN ,  HOA VU ,  STEPHEN TRINH ,  STANLEY HONG ,  THUAN VU ,  NGHIA LE ,  DUC NGUYEN ,  HIEN PHAM

IPC: G11C7/16 ,  G11C7/12 ,  G11C7/14

CPC classification number: G11C7/16 ,  G11C7/12 ,  G11C7/14

Abstract: In one example, a system comprises an array of non-volatile memory cells arranged into rows and columns, the array comprising a first bit line coupled to a first column of non-volatile memory cells and a second bit line coupled to a second column of non-volatile memory cells; and an output block coupled to the array, the output block comprising: a current-to-voltage converter to convert a first current on the first bit line into a first voltage and to convert a second current on the second bit line into a second voltage; and an analog-to-digital converter to convert one or more of the first voltage and the second voltage into a set of output bits.

公开(公告)号：US20240095508A1

公开(公告)日：2024-03-21

申请号：US18520277

申请日：2023-11-27

Applicant: Silicon Storage Technology, inc.

Inventor： HIEU VAN TRAN ,  STANLEY HONG ,  AHN LY ,  THUAN VU ,  HIEN PHAM ,  KHA NGUYEN ,  HAN TRAN

IPC: G06N3/065 ,  G06F17/16 ,  G06N3/04

CPC classification number: G06N3/065 ,  G06F17/16 ,  G06N3/04

Abstract: In one example, a system comprises a vector-by-matrix multiplication array comprising non-volatile memory cells organized into rows and columns; a plurality of word lines coupled respectively to rows of the vector-by-matrix multiplication array; and a word line driver coupled to the plurality of word lines, the word line driver comprising a plurality of select transistors coupled to a common control line and the plurality of word lines, and a plurality of bias transistors coupled to the plurality of select transistors and capable of providing a bias voltage to a single select transistor in the plurality of select transistors or to all of plurality of select transistors in response to control signals.

公开(公告)号：US20200335511A1

公开(公告)日：2020-10-22

申请号：US16919697

申请日：2020-07-02

Applicant: Silicon Storage Technology, Inc.

Inventor： HIEU VAN TRAN ,  STEVEN LEMKE ,  VIPIN TIWARI ,  NHAN DO ,  MARK REITEN

IPC: H01L27/11531 ,  G06N3/08 ,  G11C16/04 ,  H01L29/788

Abstract: Numerous embodiments of a precision tuning algorithm and apparatus are disclosed for precisely and quickly depositing the correct amount of charge on the floating gate of a non-volatile memory cell within a vector-by-matrix multiplication (VMM) array in an artificial neural network. Selected cells thereby can be programmed with extreme precision to hold one of N different values.

公开(公告)号：US20220383086A1

公开(公告)日：2022-12-01

申请号：US17875167

申请日：2022-07-27

Applicant: Silicon Storage Technology, Inc.

Inventor： HIEU VAN TRAN ,  STEVEN LEMKE ,  VIPIN TIWARI ,  NHAN DO ,  MARK REITEN

IPC: G06N3/063 ,  G06F17/16 ,  G11C11/54 ,  G11C11/56

Abstract: Numerous examples of a precision tuning algorithm and apparatus are disclosed for precisely and quickly depositing the correct amount of charge on the floating gate of a non-volatile memory cell within a vector-by-matrix multiplication (VMM) array in an artificial neural network. In one example, a method for performing a read or verify operation in a vector-by-matrix multiplication system comprising an input function circuit, a memory array, and an output circuit block is disclosed, the method comprising receiving, by the input function circuit, digital bit input values; converting the digital input values into an input signal; applying the input signal to control gate terminals of selected cells in the memory array; and generating, by the output circuit block, an output value in response to currents received from the memory array.

公开(公告)号：US20200350015A1

公开(公告)日：2020-11-05

申请号：US16930777

申请日：2020-07-16

Applicant: Silicon Storage Technology, Inc.

Inventor： HIEU VAN TRAN ,  STEVEN LEMKE ,  NHAN DO ,  VIPIN TIWARI ,  MARK REITEN

IPC: G11C16/04 ,  G06F17/16 ,  G06N3/063

Abstract: Numerous embodiments are disclosed for providing temperature compensation in a an analog memory array. The analog memory array optionally is a vector-by-matrix multiplier in an analog neuromorphic memory system used in a deep learning neural network. One embodiment comprises measuring an operating temperature within a memory array and applying, by a temperature compensation block, a bias voltage to a terminal of a memory cell in the array, wherein the bias voltage is a function of the operating temperature.

公开(公告)号：US20200342938A1

公开(公告)日：2020-10-29

申请号：US16503355

申请日：2019-07-03

Applicant: Silicon Storage Technology, Inc.

Inventor： HIEU VAN TRAN ,  THUAN VU ,  STANLEY HONG ,  STEPHEN TRINH ,  ANH LY ,  HAN TRAN ,  KHA NGUYEN ,  HIEN PHAM

IPC: G11C11/56 ,  G11C11/16 ,  G11C11/4074 ,  G06F17/16 ,  G06N3/06

Abstract: Various embodiments of word line decoders, control gate decoders, bit line decoders, low voltage row decoders, and high voltage row decoders and various types of physical layout designs for non-volatile flash memory arrays in an analog neural system are disclosed. Shared and segmented embodiments of high voltage row decoders are disclosed.

公开(公告)号：US20180277174A1

公开(公告)日：2018-09-27

申请号：US15467174

申请日：2017-03-23

Applicant: Silicon Storage Technology, Inc.

Inventor： HIEU VAN TRAN ,  XIAN LIU ,  NHAN DO

IPC: G11C7/10 ,  G11C8/12 ,  H01L21/28 ,  H01L27/11521 ,  H01L29/423

CPC classification number: G11C7/1006 ,  G11C8/08 ,  G11C8/10 ,  G11C8/12 ,  G11C16/0425 ,  G11C16/08 ,  G11C29/024 ,  G11C2029/1202 ,  G11C2029/1204 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/40114 ,  H01L29/42328 ,  H01L29/66825 ,  H01L29/7883

Abstract: A system and method are disclosed for performing address fault detection in a flash memory system. An address fault detection array is used to confirm that an activated word line or bit line is the word line or bit line that was actually intended to be activated based upon the received address, which will identify a type of fault where the wrong word line or bit line is activated. The address fault detection array also is used to indicate whether more than one word line or bit line was activated, which will identify a type of fault where two or more word lines or bit lines are activated.

公开(公告)号：US20250068900A1

公开(公告)日：2025-02-27

申请号：US18386901

申请日：2023-11-03

Applicant: Silicon Storage Technology, Inc.

Inventor： HIEU VAN TRAN ,  ANDREW KUNIL CHOE ,  HOA VU

IPC: G06N3/065

Abstract: In one example, a system comprises a vector-by-matrix multiplication array comprising non-volatile memory cells arranged into rows and columns, a first set of columns storing W+ weights and a second set of columns storing W− weights; and an output circuit to receive a first current from a respective column in the first set of columns and a second current from a respective column in the second set of columns and to generate a first voltage and a second voltage, the output circuit comprising a first current-to-voltage converter comprising a first integration capacitor to provide the first voltage equal to an initial voltage minus a first discharge value due to the first current, and a second current-to-voltage converter comprising a second integration capacitor to provide the second voltage equal to the initial voltage minus a second discharge value due to the second current.