公开(公告)号：US20210167762A1

公开(公告)日：2021-06-03

申请号：US16838847

申请日：2020-04-02

Applicant: Silicon Storage Technology, Inc.

Inventor： Ryan Mei ,  XIAOZHOU QIAN ,  HIEU VAN TRAN ,  CLAIRE ZHU

IPC: H03K3/356 ,  H03K19/0185 ,  H03K19/003 ,  H03K19/185

Abstract: An improved level shifter is disclosed. The level shifter is able to achieve a switching time below 1 ns using a relatively low voltage for VDDL, such as 0.75V. The improved level shifter comprises a coupling stage and a level-switching stage. A related method of level shifting is also disclosed.

公开(公告)号：US10804902B1

公开(公告)日：2020-10-13

申请号：US16732047

申请日：2019-12-31

Applicant: Silicon Storage Technology, Inc.

Inventor： Ryan Mei ,  Claire Zhu ,  Xiaozhou Qian

IPC: H03K19/0185 ,  H03K3/356

Abstract: An improved level shifter for use in integrated circuits is disclosed. The level shifter is able to achieve a switching time below 1 ns while still using the core power supply voltages, VDDL and VDDH, used in the prior art. The improved level shifter comprises a coupling stage and a level-switching stage.

公开(公告)号：US11038495B1

公开(公告)日：2021-06-15

申请号：US16838847

申请日：2020-04-02

Applicant: Silicon Storage Technology, Inc.

Inventor： Ryan Mei ,  Xiaozhou Qian ,  Hieu Van Tran ,  Claire Zhu

IPC: H03K3/356 ,  H03K19/185 ,  H03K19/003 ,  H03K19/0185

Abstract: An improved level shifter is disclosed. The level shifter is able to achieve a switching time below 1 ns using a relatively low voltage for VDDL, such as 0.75 V. The improved level shifter comprises a coupling stage and a level-switching stage. A related method of level shifting is also disclosed.