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公开(公告)号：US20190385685A1
公开(公告)日：2019-12-19
申请号：US16117987
申请日：2018-08-30
Applicant: Silicon Storage Technology, Inc.
Inventor： XIAOZHOU QIANG , XIAO YAN PI , KAI MAN YUE , LI FANG BIAN
Abstract: An improved low-power sense amplifier for use in a flash memory system is disclosed. The reference bit line and selected bit line are pre-charged during a limited period and with limited power consumed. The pre-charge circuit can be trimmed during a configuration process to further optimize power consumption during the pre-charge operation.
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