公开(公告)号：US20210082517A1

公开(公告)日：2021-03-18

申请号：US16813317

申请日：2020-03-09

Applicant: Silicon Storage Technology, Inc.

Inventor： XIAOZHOU QIAN ,  XIAO YAN PI ,  VIPIN TIWARI

IPC: G11C16/14 ,  G11C16/28 ,  G11C7/10

Abstract: A memory device that includes a memory array having pluralities of non-volatile memory cells, a plurality of index memory cells each associated with a different one of the pluralities of the non-volatile memory cells, and a controller. The controller is configured to erase the pluralities of non-volatile memory cells, set each of the index memory cells to a first state, and program first data into the memory array by reading the plurality of index memory cells and determining that a first one of the index memory cells is in the first state, programming the first data into the plurality of the non-volatile memory cells associated with the first one of the index memory cells, and setting the first one of the index memory cells to a second state different from the first state.

公开(公告)号：US20190385685A1

公开(公告)日：2019-12-19

申请号：US16117987

申请日：2018-08-30

Applicant: Silicon Storage Technology, Inc.

Inventor： XIAOZHOU QIANG ,  XIAO YAN PI ,  KAI MAN YUE ,  LI FANG BIAN

IPC: G11C16/28 ,  G11C16/24 ,  G11C16/32

Abstract: An improved low-power sense amplifier for use in a flash memory system is disclosed. The reference bit line and selected bit line are pre-charged during a limited period and with limited power consumed. The pre-charge circuit can be trimmed during a configuration process to further optimize power consumption during the pre-charge operation.