公开(公告)号：US11803125B2

公开(公告)日：2023-10-31

申请号：US16919227

申请日：2020-07-02

Applicant: Singapore University of Technology and Design

Inventor： You Sin Tan ,  Joel Yang ,  Hailong Liu ,  Qifeng Ruan

IPC: G03F7/20 ,  G03F7/38 ,  H01L21/027 ,  G03F7/16 ,  G03F7/075 ,  G03F7/32 ,  G03F7/038

CPC classification number: G03F7/2037 ,  G03F7/038 ,  G03F7/0755 ,  G03F7/162 ,  G03F7/2022 ,  G03F7/322 ,  G03F7/38 ,  H01L21/0274

Abstract: There is provided a method of forming a patterned structure on a substrate. The method includes: forming a resist layer on the substrate, the resist layer being a negative tone resist; exposing a first portion of the resist layer to a focused electron beam to form a modified first portion, the modified first portion defining a boundary of a second portion of the resist layer; performing a plasma treatment on a surface of the resist layer, including on a surface of the second portion of the resist layer to form a modified surface portion of the second portion of the resist layer, resulting in a plasma treated resist layer; and performing development of the plasma treated resist layer to form the patterned structure on the substrate corresponding the second portion of the resist layer.

公开(公告)号：US20210405532A1

公开(公告)日：2021-12-30

申请号：US16919227

申请日：2020-07-02

Applicant: Singapore University of Technology and Design

Inventor： You Sin Tan ,  Joel Yang ,  Hailong Liu ,  Qifeng Ruan

IPC: G03F7/20 ,  H01L21/027 ,  G03F7/16 ,  G03F7/38 ,  G03F7/32 ,  G03F7/038 ,  G03F7/075

Abstract: There is provided a method of forming a patterned structure on a substrate. The method includes: forming a resist layer on the substrate, the resist layer being a negative tone resist; exposing a first portion of the resist layer to a focused electron beam to form a modified first portion, the modified first portion defining a boundary of a second portion of the resist layer; performing a plasma treatment on a surface of the resist layer, including on a surface of the second portion of the resist layer to form a modified surface portion of the second portion of the resist layer, resulting in a plasma treated resist layer; and performing development of the plasma treated resist layer to form the patterned structure on the substrate corresponding the second portion of the resist layer.