Giant magnetoresistive sensor with pinning layer
    1.
    发明授权
    Giant magnetoresistive sensor with pinning layer 失效
    具有钉扎层的巨磁阻传感器

    公开(公告)号:US06433972B1

    公开(公告)日:2002-08-13

    申请号:US09380435

    申请日:1999-09-01

    IPC分类号: G11B539

    摘要: A giant magnetoresistive stack (10) for use in a magnetic read head includes a NiFeCr seed layer (12), a ferromagnetic free layer (14), a nonmagnetic spacer layer (16), a ferromagnetic pinned layer (18), and a PtMnX pinning layer (20), where X is either Cr or Pd. The ferromagnetic free layer (14) has a rotatable magnetic moment and is positioned adjacent to the NiFeCr seed layer (12). The ferromagnetic pinned layer (18) has a fixed magnetic moment and is positioned adjacent to the PtMnX pinning layer (20). The nonmagnetic spacer layer (16) is positioned between the free layer (14) and the pinned layer (18).

    摘要翻译: 用于磁读头的巨磁电阻堆(10)包括NiFeCr晶种层(12),铁磁自由层(14),非磁性间隔层(16),铁磁固定层(18)和PtMnX 钉扎层(20),其中X是Cr或Pd。 铁磁自由层(14)具有可旋转的磁矩并且被定位成与NiFeCr晶种层(12)相邻。 铁磁钉扎层(18)具有固定的磁矩并且邻近PtMnX钉扎层(20)定位。 非磁性间隔层(16)位于自由层(14)和被钉扎层(18)之间。