公开(公告)号：US10138572B2

公开(公告)日：2018-11-27

申请号：US15070610

申请日：2016-03-15

申请人： Sino-American Silicon Products Inc.

发明人： Sung-Lin Hsu ,  Cheng-Jui Yang ,  Pei-Kai Huang ,  Sheng-Hua Ni ,  Yu-Min Yang ,  Ming-Kung Hsiao ,  Wen-Huai Yu ,  Ching-Shan Lin ,  Wen-Ching Hsu ,  Chung-Wen Lan

IPC分类号： C01B33/02 ,  C30B11/00 ,  C30B28/06 ,  C30B29/06 ,  C30B11/02 ,  C30B11/14 ,  C30B9/00

摘要： A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.

公开(公告)号：US20160194782A1

公开(公告)日：2016-07-07

申请号：US15070610

申请日：2016-03-15

申请人： Sino-American Silicon Products Inc.

发明人： Sung-Lin Hsu ,  Cheng-Jui Yang ,  Pei-Kai Huang ,  Sheng-Hua Ni ,  Yu-Min Yang ,  Ming-Kung Hsiao ,  Wen-Huai Yu ,  Ching-Shan Lin ,  Wen-Ching Hsu ,  Chung-Wen Lan

IPC分类号： C30B11/00 ,  C01B33/02 ,  C30B29/06 ,  C30B11/02 ,  C30B11/14

CPC分类号： C30B11/006 ,  C01B33/02 ,  C30B9/00 ,  C30B11/002 ,  C30B11/003 ,  C30B11/02 ,  C30B11/14 ,  C30B28/06 ,  C30B29/06

摘要： A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.