公开(公告)号：US07651587B2

公开(公告)日：2010-01-26

申请号：US11202043

申请日：2005-08-11

申请人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Robert T. Chen ,  Jason T. Bloking ,  Irene Chou ,  Steven H. Kim ,  Young S. Lee ,  Ellie Y. Yieh

发明人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Robert T. Chen ,  Jason T. Bloking ,  Irene Chou ,  Steven H. Kim ,  Young S. Lee ,  Ellie Y. Yieh

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01J37/3244 ,  H01J37/321 ,  H01J37/32431 ,  H01J37/32458

摘要： A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall and a dome positioned above the sidewall. The dome has physically separated and noncontiguous pieces. The gas-delivery system introduces e a gas into the process chamber through side nozzles positioned between two of the physically separated and noncontiguous pieces of the dome. The high-density plasma generating system is operatively coupled with the process chamber. The substrate holder is disposed within the process chamber and supports a substrate during substrate processing. The controller controls the gas-delivery system and the high-density plasma generating system.

摘要翻译： 衬底处理系统具有限定处理室，气体输送系统，高密度等离子体产生系统，衬底保持器和控制器的壳体。 壳体包括侧壁和位于侧壁上方的圆顶。 圆顶具有物理分离和不连续的部分。 气体输送系统通过位于两个物理分离的和不连续的圆顶之间的侧喷嘴将气体引入处理室。 高密度等离子体产生系统与处理室可操作地耦合。 衬底保持器设置在处理室内并且在衬底处理期间支撑衬底。 控制器控制气体输送系统和高密度等离子体发生系统。

公开(公告)号：US07629271B1

公开(公告)日：2009-12-08

申请号：US12233881

申请日：2008-09-19

申请人： Jing Wu ,  Anchuan Wang ,  Robert T. Chen ,  Young S. Lee

发明人： Jing Wu ,  Anchuan Wang ,  Robert T. Chen ,  Young S. Lee

IPC分类号： H01L21/31

CPC分类号： H01L21/3146 ,  C23C16/0218 ,  C23C16/26

摘要： A method for forming a compressive film over a field effect transistor over a substrate is provided. The field effect transistor includes a channel region between a drain and a source within the substrate. The channel region is controlled by a gate electrode. The method includes depositing a diamond-like carbon (DLC) film over the field effect transistor to compress the channel region by generating a plasma of a processing gas including a precursor gas and an additive gas, wherein the precursor substantially includes only C2H2 and the additive gas includes Ar.

摘要翻译： 提供了一种在衬底上形成场效应晶体管上的压缩膜的方法。 场效应晶体管包括在衬底内的漏极和源极之间的沟道区域。 沟道区域由栅电极控制。 该方法包括在场效应晶体管上沉积类金刚石碳（DLC）膜，以通过产生包括前体气体和添加气体的处理气体的等离子体来压缩沟道区域，其中前体基本上仅包含C2H2和添加剂 气体包括Ar。