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1.发明公开公开(公告)号：US20240039507A1
公开(公告)日：2024-02-01
申请号：US18221130
申请日：2023-07-12
发明人： Rei Goto , Shoji Okamoto , Tatsuya Fujii , Hironori Fukuhara
CPC分类号： H03H9/02661 , H03H9/6483 , H03H9/02574
摘要： A surface acoustic wave filter package comprising a tapered interdigital transducer structure.
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2.发明公开公开(公告)号：US20230378937A1
公开(公告)日：2023-11-23
申请号：US18195423
申请日：2023-05-10
发明人： Rei Goto , Shoji Okamoto , Hironori Fukuhara
CPC分类号： H03H9/725 , H03H9/6489 , H03H9/02661 , H03H9/6483
摘要： A radio frequency multiplexer comprises a piezoelectric substrate, a first surface acoustic wave resonator including interdigital transducer electrodes disposed on the piezoelectric substrate and having a first metal layer formed of a first metal and a second metal layer disposed on the first metal layer and formed of a second metal having a higher density than the first metal, and a second surface acoustic wave resonator including interdigital transducer electrodes disposed on the piezoelectric substrate and having a first metal layer formed of the first metal, but lacking the second metal layer.
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3.发明公开公开(公告)号：US20240178814A1
公开(公告)日：2024-05-30
申请号：US18430047
申请日：2024-02-01
发明人： Rei Goto , Hironori Fukuhara , Shoji Okamoto
CPC分类号： H03H9/02952 , H03H9/02574 , H03H9/6453
摘要： A surface acoustic wave device is disclosed. The surface acoustic wave device can include a multilayer piezoelectric substrate having a support substrate and a piezoelectric layer over the support substrate. The piezoelectric layer has a first surface facing the support substrate and a second surface opposite the first surface. The surface acoustic wave device can include an interdigital transducer electrode having a first portion and a second portion. The first portion is positioned below the second surface of the piezoelectric layer and the second portion is positioned above the second surface. The first portion has a first sidewall and a second portion has a second sidewall angled relative to the first sidewall.
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公开(公告)号：US20240178812A1
公开(公告)日：2024-05-30
申请号：US18429799
申请日：2024-02-01
发明人： Rei Goto , Hironori Fukuhara , Shoji Okamoto
IPC分类号： H03H9/02 , H03H9/64 , H10N30/853
CPC分类号： H03H9/02574 , H03H9/02834 , H03H9/6483 , H10N30/8542
摘要： A surface acoustic wave device is disclosed. The surface acoustic wave device can include a multilayer piezoelectric substrate having a support substrate and a piezoelectric layer over the support substrate and an interdigital transducer electrode formed at least partially in the piezoelectric layer. The interdigital transducer electrode has a first layer and a second layer including different materials. The first layer includes a material that has a mass density greater than or equal to a mass density of molybdenum.
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5.发明公开公开(公告)号：US20240048125A1
公开(公告)日：2024-02-08
申请号：US18229590
申请日：2023-08-02
发明人： Rei Goto , Hironori Fukuhara , Shoji Okamoto
CPC分类号： H03H9/6453 , H03H9/25 , H03H3/04 , H03H9/02559
摘要： A radio frequency acoustic filter includes a plurality of resonators arranged to filter a signal. At least one resonator of the plurality of resonators includes a support substrate, a functional layer, and a piezoelectric layer. Both the piezoelectric layer and the functional layer are supported by the support substrate. An interdigital transducer structure is at least partially formed in the piezoelectric layer.
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6.发明公开公开(公告)号：US20230291385A1
公开(公告)日：2023-09-14
申请号：US18177257
申请日：2023-03-02
发明人： Shoji Okamoto , Rei Goto , Hironori Fukuhara
CPC分类号： H03H9/25 , H03H9/14541
摘要： An acoustic wave device comprises a substrate including a piezoelectric material, interdigital transducer (IDT) electrodes including interdigitated electrode fingers disposed on a surface of the substrate, and a passivation layer formed on tops of the IDT electrodes and on the piezoelectric material in gaps between adjacent IDT electrodes, the passivation film being thicker on the tops of the IDT electrodes than on the piezoelectric material in the gaps between adjacent IDT electrodes to improve an electromechanical coupling factor of the acoustic wave device.
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