公开(公告)号：US20250125140A1

公开(公告)日：2025-04-17

申请号：US18834122

申请日：2023-01-27

Applicant: Soitec

Inventor： Andrea Quintero-Colmenares ,  Frédéric Allibert ,  Alexis Drouin ,  Séverin Rouchier ,  Walter Schwarzenbach ,  Hugo Biard ,  Loïc Kabelaan ,  Oleg Kononchuk ,  Sidoine Odoul ,  Jérémy Roi

IPC: H01L21/02 ,  H01L21/324

Abstract: A method of manufacturing a polycrystalline silicon carbide wafer includes the following stages: heat treatment of a polycrystalline silicon carbide slab; thinning of the polycrystalline silicon carbide slab, the thinning comprising a correction, by withdrawal of material from the polycrystalline silicon carbide slab, of a deformation brought about by the heat treatment.