公开(公告)号：US20240112908A1

公开(公告)日：2024-04-04

申请号：US18546057

申请日：2022-03-14

Applicant: Soitec

Inventor： Hugo Biard ,  Didier Landru

IPC: H01L21/02 ,  H01L21/20 ,  H01L21/265

CPC classification number: H01L21/02362 ,  H01L21/2007 ,  H01L21/265

Abstract: A method of manufacturing a composite structure comprises: a) providing a donor substrate of a single-crystal semiconductor material, b) implanting ions into the donor substrate, excluding an annular peripheral region, to form a buried brittle plane, the implantation conditions defining a first thermal budget for obtaining bubbling on a face of the donor substrate and a second thermal budget for obtaining a fracture in the brittle plane, c) forming a stiffening film on the donor substrate, carried out by applying a thermal budget lower than the first thermal budget, the stiffening film being perforated in the form of a mesh, the perforated stiffening film leaving a plurality of zones of the front face bare, d) depositing a carrier substrate on the donor substrate carried out by applying a thermal budget greater than the first thermal budget, and e) separating the donor substrate along the brittle plane.

公开(公告)号：US12159781B2

公开(公告)日：2024-12-03

申请号：US17907517

申请日：2021-01-12

Applicant: Soitec

Inventor： Hugo Biard

IPC: C30B25/18 ,  C23C14/48 ,  C23C16/01 ,  C23C16/32 ,  C30B1/02 ,  C30B29/36 ,  C30B31/22 ,  C30B33/10 ,  H01L21/02

Abstract: A method for manufacturing a composite structure comprising a thin layer made of monocrystalline silicon carbide arranged on a carrier substrate made of silicon carbide, the method comprising: a) a step of providing a donor substrate made of monocrystalline silicon carbide, b) a step of ion implantation of light species into the donor substrate, to form a buried brittle plane delimiting the thin layer between the buried brittle plane and a free surface of the donor substrate, c) a succession of n steps of forming crystalline carrier layers, with n greater than or equal to 2; the n crystalline carrier layers being positioned on the front face of the donor substrate successively one on the other, and forming the carrier substrate; each formation step comprising: direct liquid injection chemical vapor deposition, at a temperature below 900° C., to form a carrier layer, the carrier layer being formed by an at least partially amorphous SiC matrix, and having a thickness of less than or equal to 200 microns; a crystallization heat treatment of the carrier layer, at a temperature of less than or equal to 1000° C., to form a crystalline carrier layer; d) a step of separation along the buried brittle plane, to form, on the one hand, a composite structure comprising the thin layer on the carrier substrate and, on the other hand, the rest of the donor substrate.

公开(公告)号：US20240379351A1

公开(公告)日：2024-11-14

申请号：US18692239

申请日：2022-09-06

Applicant: Soitec

Inventor： Hugo Biard ,  Mélanie Lagrange

IPC: H01L21/02

Abstract: A method of fabricating a polycrystalline silicon carbide carrier substrate involves growing an initial polycrystalline silicon carbide substrate on a seed of graphite or of silicon-carbide. A stiffening carbon film is then formed on a front face of the initial substrate. The initial substrate has, in the plane of its front face, a first average silicon carbide grain size. The seed is then removed, so as to free the back face of the initial substrate, which has, in the plane of its back face, a second average silicon carbide grain size, which is smaller than the first average size. The back face of the initial substrate is then thinned to a thickness for which the initial substrate has, in the plane of its thinned back face, a third average grain size equal to the first average grain size to within ±30%.

公开(公告)号：US20240170284A1

公开(公告)日：2024-05-23

申请号：US18550044

申请日：2022-03-03

Applicant: Soitec

Inventor： Gweltaz Gaudin ,  Christophe Maleville ,  lonut Radu ,  Hugo Biard

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/32 ,  C23C16/56 ,  H01L21/762

CPC classification number: H01L21/02529 ,  C23C16/0227 ,  C23C16/325 ,  C23C16/56 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/76254

Abstract: A method for producing a semiconductor structure, comprises: a) providing a temporary substrate made of graphite having a grain size of between 4 microns and 35 microns, a porosity of between 6 and 17%, and a coefficient of thermal expansion of between 4×10-6/° C. and 5×10-6/° C.; b) depositing, on a front face of the temporary substrate, a carrier layer made of polycrystalline silicon carbide having a thickness of between 10 microns and 200 microns, c) transferring a working layer made of monocrystalline silicon carbide to the carrier layer to form a composite structure, the transfer implementing bonding by molecular adhesion, d) forming an active layer on the working layer, e) and removing the temporary substrate to form the semiconductor structure, the structure including the active layer, the working layer and the carrier layer. A composite structure is obtained in an intermediate step of the production method.

公开(公告)号：US20230260841A1

公开(公告)日：2023-08-17

申请号：US17756615

申请日：2020-10-26

Applicant: Soitec

Inventor： Ionut Radu ,  Hugo Biard ,  Christophe Maleville ,  Eric Guiot ,  Didier Landru

IPC: H01L21/78 ,  H01L21/02 ,  C30B29/36 ,  C30B25/20 ,  C30B31/22 ,  C30B33/10 ,  C23C16/32

CPC classification number: H01L21/7813 ,  H01L21/02079 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02628 ,  C30B29/36 ,  C30B25/20 ,  C30B31/22 ,  C30B33/10 ,  C23C16/325

Abstract: A method of producing a composite structure comprising a thin layer of monocrystalline silicon carbide arranged on a carrier substrate of silicon carbide comprises: a) a step of provision of an initial substrate of monocrystalline silicon carbide, b) a step of epitaxial growth of a donor layer of monocrystalline silicon carbide on the initial substrate, to form a donor substrate, c) a step of ion implantation of light species into the donor layer, to form a buried brittle plane delimiting the thin layer, d) a step of formation of a carrier substrate of silicon carbide on the free surface of the donor layer, comprising a deposition at a temperature of between 400° C. and 1100° C., e) a step of separation along the buried brittle plane, to form the composite structure and the remainder of the donor substrate, and f) a step of chemical-mechanical treatment(s) of the composite structure.

公开(公告)号：US20230160102A1

公开(公告)日：2023-05-25

申请号：US17907509

申请日：2021-01-12

Applicant: Soitec

Inventor： Hugo Biard ,  Ionut Radu ,  Didier Landru

IPC: C30B25/20 ,  H01L21/02 ,  C30B25/18 ,  C30B31/22 ,  C23C16/01 ,  C23C16/32 ,  C23C16/56 ,  C23C14/48 ,  C23C14/58

CPC classification number: C30B25/20 ,  C23C14/48 ,  C23C14/588 ,  C23C16/01 ,  C23C16/56 ,  C23C16/325 ,  C30B25/183 ,  C30B31/22 ,  H01L21/02002

Abstract: A method for manufacturing a composite structure comprising a thin layer made of monocrystalline silicon carbide arranged on a carrier substrate made of silicon carbide, the method comprising: a) a step of providing a donor substrate made of monocrystalline SiC, the donor substrate comprising a donor layer produced by epitaxial growth on an initial substrate, the donor layer exhibiting a density of crystal defects that is lower than that of the initial substrate; b) a step of ion implantation of light species into the donor layer, in order to form a buried brittle plane delimiting the thin layer between the buried brittle plane and a free face of the donor layer; c) a succession of n steps of formation of carrier layers, with n greater than or equal to 2, the n carrier layers being arranged on the donor layer successively on one another and forming the carrier substrate, each step of formation comprising a chemical vapor deposition, at a temperature of between 400° C. and 1100° C., in order to form a carrier layer made of polycrystalline SiC, the n chemical vapor depositions being carried out at n different temperatures; d) a step of separation along the buried brittle plane, in order to form, on the one hand, a composite structure comprising the thin layer on the carrier substrate and, on the other hand, the remainder of the donor substrate; and e) a step of mechanical and/or chemical treatment(s) of the composite structure.

公开(公告)号：US20250140602A1

公开(公告)日：2025-05-01

申请号：US18837681

申请日：2023-01-31

Applicant: Soitec

Inventor： Gweltaz Gaudin ,  Hugo Biard

IPC: H01L21/762 ,  C30B29/36

Abstract: A method of manufacturing a composite structure including a thin layer of a first monocrystalline material arranged on a carrier substrate, the method including: providing an initial substrate of a second polycrystalline material; and depositing, by spin coating, at least on one front surface of the initial substrate, a layer of polymer resin including preformed 3D carbon-carbon bonds; performing a first annealing step at a temperature between 120° C. and 180° C. on the initial substrate provided with the polymer resin layer, to form a layer of cross-linked polymer resin; and performing a second annealing step at a temperature greater than 600° C., in a neutral atmosphere, to convert the layer of cross-linked polymer resin into a glassy carbon film. a composite structure includes a thin layer of a first monocrystalline material on a carrier substrate, which includes a glassy carbon film on an initial substrate of a second polycrystalline.

公开(公告)号：US20250125140A1

公开(公告)日：2025-04-17

申请号：US18834122

申请日：2023-01-27

Applicant: Soitec

Inventor： Andrea Quintero-Colmenares ,  Frédéric Allibert ,  Alexis Drouin ,  Séverin Rouchier ,  Walter Schwarzenbach ,  Hugo Biard ,  Loïc Kabelaan ,  Oleg Kononchuk ,  Sidoine Odoul ,  Jérémy Roi

IPC: H01L21/02 ,  H01L21/324

Abstract: A method of manufacturing a polycrystalline silicon carbide wafer includes the following stages: heat treatment of a polycrystalline silicon carbide slab; thinning of the polycrystalline silicon carbide slab, the thinning comprising a correction, by withdrawal of material from the polycrystalline silicon carbide slab, of a deformation brought about by the heat treatment.

公开(公告)号：US20250006492A1

公开(公告)日：2025-01-02

申请号：US18697809

申请日：2022-09-21

Applicant: Soitec

Inventor： Hugo Biard ,  Ionut Radu ,  Frédéric Allibert

IPC: H01L21/02

Abstract: A method of fabricating a composite structure including a thin layer of single-crystal silicon carbide on a polycrystalline silicon carbide carrier substrate includes providing an initial substrate of single-crystal silicon carbide and a carrier substrate of polycrystalline silicon carbide. A porous layer is formed on the initial substrate, and a superficial layer of amorphous silicon carbide is formed on the carrier substrate and/or on the porous layer. The initial substrate and the carrier substrate are joined to form a first intermediate structure, which is heat treated at an elevated temperature to crystallize the superficial layer, at least partly in the form of single-crystal silicon carbide, to form the thin layer and to form a second intermediate structure, which is separated in the porous layer to form the composite structure and a remainder of the initial substrate.

公开(公告)号：US20240145294A1

公开(公告)日：2024-05-02

申请号：US18548616

申请日：2022-03-03

Applicant: Soitec

Inventor： Hugo Biard ,  Gweltaz Gaudin

IPC: H01L21/762 ,  H01L21/02

CPC classification number: H01L21/76254 ,  H01L21/02444 ,  H01L21/02529

Abstract: A method for manufacturing a semiconductor structure comprises: a) providing a temporary substrate comprising a material having a coefficient of thermal expansion close to that of silicon carbide; b) forming an intermediate graphite layer on a front face of the temporary substrate; c) depositing, on the intermediate layer, a polycrystalline silicon carbide support layer having a thickness of between 10 microns and 200 microns, d) transferring a useful monocrystalline silicon carbide layer onto the support layer in order to form a composite structure, the transfer using molecular adhesion bonding, e) forming an active layer on the useful layer, and f) disassembling, at an interface of or inside the intermediate layer, to structure to form the semiconductor structure including the active layer, the useful layer and the support layer. A composite structure is obtained by the method.