公开(公告)号：US08728913B2

公开(公告)日：2014-05-20

申请号：US13933779

申请日：2013-07-02

Applicant: Soitec

Inventor： Sébastien Kerdiles ,  Walter Schwarzenbach ,  Aziz Alami-Idrissi

IPC: H01L21/30 ,  H01L21/78

CPC classification number: H01L21/30625 ,  H01L21/02032 ,  H01L21/76254

Abstract: The invention relates to a method for transferring a layer from a donor substrate onto a handle substrate wherein, after detachment, the remainder of the donor substrate is reused. To get rid of undesired protruding edge regions that are due to the chamfered geometry of the substrates, the invention proposes to carry out an additional etching process before detachment occurs.

Abstract translation: 本发明涉及一种用于将层从施主衬底转移到手柄衬底上的方法，其中，在剥离之后，再次使用剩余的施主衬底。 为了摆脱由于基板的倒角几何形状引起的不期望的突出边缘区域，本发明提出在拆卸发生之前执行附加的蚀刻工艺。

公开(公告)号：US20130295696A1

公开(公告)日：2013-11-07

申请号：US13933779

申请日：2013-07-02

Applicant: Soitec

Inventor： Sébastien Kerdiles ,  Walter Schwarzenbach ,  Aziz Alami-Idrissi

IPC: H01L21/306

CPC classification number: H01L21/30625 ,  H01L21/02032 ,  H01L21/76254

Abstract: The invention relates to a method for transferring a layer from a donor substrate onto a handle substrate wherein, after detachment, the remainder of the donor substrate is reused. To get rid of undesired protruding edge regions which are due to the chamfered geometry of the substrates, the invention proposes to carry out an additional etching process before detachment occurs.

Abstract translation: 本发明涉及一种用于将层从施主衬底转移到手柄衬底上的方法，其中，在剥离之后，再次使用剩余的施主衬底。 为了摆脱由于基板的倒角几何形状引起的不期望的突出边缘区域，本发明提出在分离发生之前执行附加的蚀刻工艺。