公开(公告)号：US20150050797A1

公开(公告)日：2015-02-19

申请号：US14386937

申请日：2013-03-14

Applicant: Soitec

Inventor： Nadia Ben Mohamed ,  Carole David ,  Camille Rigal

IPC: H01L21/762 ,  H01L21/265

CPC classification number: H01L21/76254 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/76251 ,  H01L21/76259

Abstract: The disclosure relates to a method for implantation of atomic or ionic species into a batch of substrates made of semiconductor material, in which: each substrate made of semiconductor material is positioned on a respective support of a batch implanter, each substrate comprising a thin layer of electrical insulator on its surface; and a dose of at least one ionic or atomic species is implanted over the whole surface of the substrates, through their layer of insulator, so as to form a fragilization region within each substrate and to bound there a thin layer of semiconductor material between the thin layer of insulator and the fragilization region of the substrate, the implantation method being characterized in that, during the method, each support on which a substrate is positioned has at least two separate inclinations with respect to the plane orthogonal to the direction of implantation of the species in order to improve the implantation depth of the species in the substrate. The disclosure also relates to structures of the semiconductor-on-insulator type obtained by the implementation of the implantation method.

Abstract translation: 本发明涉及一种用于将原子或离子物质注入由半导体材料制成的一批衬底中的方法，其中：由半导体材料制成的每个衬底位于批量注入机的相应支撑件上，每个衬底包括薄层 表面电绝缘子; 并且在衬底的整个表面上通过它们的绝缘体层注入至少一种离子或原子物质的剂量，以在每个衬底内形成脆性区域，并在其之间形成薄层半导体材料 绝缘体层和基板的脆性区域，该注入方法的特征在于，在该方法期间，其上定位有基板的每个支撑件具有至少两个相对于垂直于植入方向的平面的独立倾斜 物种以提高物质在基质中的植入深度。 本公开还涉及通过实施注入方法获得的绝缘体上半导体类型的结构。

公开(公告)号：US09425081B2

公开(公告)日：2016-08-23

申请号：US14386937

申请日：2013-03-14

Applicant: Soitec

Inventor： Nadia Ben Mohamed ,  Carole David ,  Camille Rigal

IPC: H01L21/762 ,  H01L21/20 ,  H01L21/18 ,  H01L21/265

CPC classification number: H01L21/76254 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/76251 ,  H01L21/76259

Abstract: The disclosure relates to a method for implantation of atomic or ionic species into a batch of substrates made of semiconductor material, in which: each substrate made of semiconductor material is positioned on a respective support of a batch implanter, each substrate comprising a thin layer of electrical insulator on its surface; and a dose of at least one ionic or atomic species is implanted over the whole surface of the substrates, through their layer of insulator, so as to form a fragilization region within each substrate and to bound there a thin layer of semiconductor material between the thin layer of insulator and the fragilization region of the substrate, the implantation method being characterized in that, during the method, each support on which a substrate is positioned has at least two separate inclinations with respect to the plane orthogonal to the direction of implantation of the species in order to improve the implantation depth of the species in the substrate. The disclosure also relates to structures of the semiconductor-on-insulator type obtained by the implementation of the implantation method.

Abstract translation: 本发明涉及一种用于将原子或离子物质注入由半导体材料制成的一批衬底中的方法，其中：由半导体材料制成的每个衬底位于批量注入机的相应支撑件上，每个衬底包括薄层 表面电绝缘子; 并且在衬底的整个表面上通过它们的绝缘体层注入至少一种离子或原子物质的剂量，以在每个衬底内形成脆性区域，并在其之间形成薄层半导体材料 绝缘体层和基板的脆性区域，该注入方法的特征在于，在该方法期间，其上定位有基板的每个支撑件具有至少两个相对于垂直于植入方向的平面的独立倾斜度 物种以提高物质在基质中的植入深度。 本公开还涉及通过实施注入方法获得的绝缘体上半导体类型的结构。