公开(公告)号：US20160351438A1

公开(公告)日：2016-12-01

申请号：US15159646

申请日：2016-05-19

Applicant: Soitec

Inventor： Ludovic Ecarnot ,  Nicolas Daval ,  Nadia Ben Mohamed ,  Francois Boedt ,  Carole David ,  Isabell Guerin

IPC: H01L21/762 ,  B28D5/00

CPC classification number: H01L21/76251 ,  B28D5/00 ,  H01L21/02002 ,  H01L21/76254

Abstract: A method for transferring a layer from a single-crystal substrate, called a donor substrate, onto a receiver substrate, includes supplying the single-crystal donor substrate, the substrate having a notch oriented in a first direction of the crystal and a weakness region bounding the layer to be transferred, bonding of the single-crystal donor substrate onto the receiver substrate, the main surface of the donor substrate opposite to the weakness region with respect to the layer to be transferred being at the bonding interface, and detachment of the donor substrate along the weakness region. In the method, the donor substrate has, on the main surface bonded to the receiver substrate, an array of atomic steps extending essentially in a second direction of the crystal different from the first direction.

Abstract translation: 将被称为供体衬底的单晶衬底的层转移到接收器衬底上的方法包括：提供单晶施主衬底，具有沿晶体的第一方向取向的凹槽的衬底和包围晶体的弱区域 要转移的层，将单晶供体基板接合到接收器基板上，供体基板的与弱磁区相对的相对于待转移层的主表面在接合界面处，以及供体的分离 基底沿弱点区域。 在该方法中，施主衬底在与接收器衬底接合的主表面上具有基本上沿与第一方向不同的晶体的第二方向延伸的原子台阶阵列。