公开(公告)号：US20230011691A1

公开(公告)日：2023-01-12

申请号：US17757408

申请日：2020-11-27

Applicant: Soitec

Inventor： Laurent Viravaux ,  Sébastien Carton ,  Onintza Ros

IPC: H01L21/306 ,  H01L21/02

Abstract: A method for etching a main surface of a thin layer of a substrate, which comprises immersing the substrate n an etching bath so as to expose the main surface to an etching agent, the substrate being oriented relative to the bath such that: —when it is introduced into the bath, the main surface is gradually immersed from an initial introduction point (PII) to an end introduction point (PFI), at an introduction speed, and —when it exits the bath, the main surface gradually emerges from an initial exit point (PIS) to an end exit point (PFS), at an exit speed, the method being characterized in that: —the introduction speed is chosen in such a way as to etch the main surface according to a first non-uniform profile between the initial introduction point (PII) and the end introduction point (PFI), and/or —the exit speed is chosen in such a way as to etch the main surface according to a second non-uniform profile between the initial exit point (PIS) and the end exit point (PFS), in order to compensate for non-uniformities in the thickness of the thin layer.

公开(公告)号：US12176244B2

公开(公告)日：2024-12-24

申请号：US17756431

申请日：2020-11-24

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Laurent Viravaux

IPC: H01L21/762 ,  H01L21/67

Abstract: A method for bonding a first substrate and a second substrate comprises bringing the first and second substrates into contact and implementing heating of a peripheral zone of at least one of the first and second substrates. The heating is initiated before the substrates are brought into contact and continued at least until the substrates are brought into contact in the zone. The heating is implemented by an infrared lamp configured to emit radiation having an outer boundary corresponding to the edge of the substrates.

公开(公告)号：US20230032336A1

公开(公告)日：2023-02-02

申请号：US17756431

申请日：2020-11-24

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Laurent Viravaux

IPC: H01L21/762 ,  H01L21/67

Abstract: A method for bonding a first substrate and a second substrate comprises bringing the first and second substrates into contact and implementing heating of a peripheral zone of at least one of the first and second substrates. The heating is initiated before the substrates are brought into contact and continued at least until the substrates are brought into contact in the zone. The heating is implemented by an infrared lamp configured to emit radiation having an outer boundary corresponding to the edge of the substrates.

公开(公告)号：US12040194B2

公开(公告)日：2024-07-16

申请号：US17757408

申请日：2020-11-27

Applicant: Soitec

Inventor： Laurent Viravaux ,  Sébastien Carton ,  Onintza Ros

IPC: H01L21/306 ,  H01L21/02

CPC classification number: H01L21/30608 ,  H01L21/0206

Abstract: A method for etching a main surface of a thin layer of a substrate, which comprises immersing the substrate in an etching bath so as to expose the main surface to an etching agent, the substrate being oriented relative to the bath such that:—when it is introduced into the bath, the main surface is gradually immersed from an initial introduction point (PII) to an end introduction point (PFI), at an introduction speed, and—when it exits the bath, the main surface gradually emerges from an initial exit point (PIS) to an end exit point (PFS), at an exit speed, the method being characterized in that:—the introduction speed is chosen in such a way as to etch the main surface according to a first non-uniform profile between the initial introduction point (PII) and the end introduction point (PFI), and/or—the exit speed is chosen in such a way as to etch the main surface according to a second non-uniform profile between the initial exit point (PIS) and the end exit point (PFS), in order to compensate for non-uniformities in the thickness of the thin layer.

公开(公告)号：US20200083065A1

公开(公告)日：2020-03-12

申请号：US16560739

申请日：2019-09-04

Applicant: Soitec

Inventor： Laurent Viravaux ,  Sébastien Ledrappier

IPC: H01L21/67 ,  H01L21/02 ,  B08B3/08

Abstract: A method of treating an SOI substrate in a single wafer cleaner includes gripping and rotating the substrate using a system, and dispensing a first liquid solution from a first nozzle in the form of a spray of droplets onto a front face of the SOI substrate. The kinetic energy per unit area of the droplets is lower than or equal to 30 joules/m2.