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公开(公告)号：US20200083065A1
公开(公告)日：2020-03-12
申请号：US16560739
申请日：2019-09-04
Applicant: Soitec
Inventor： Laurent Viravaux , Sébastien Ledrappier
Abstract: A method of treating an SOI substrate in a single wafer cleaner includes gripping and rotating the substrate using a system, and dispensing a first liquid solution from a first nozzle in the form of a spray of droplets onto a front face of the SOI substrate. The kinetic energy per unit area of the droplets is lower than or equal to 30 joules/m2.
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