公开(公告)号：US20240170577A1

公开(公告)日：2024-05-23

申请号：US18551104

申请日：2022-03-17

Applicant: Soitec

Inventor： Ionut Radu ,  Guillaume Besnard ,  Sorin Cristoloveanu

IPC: H01L29/786 ,  H01L21/762

CPC classification number: H01L29/78603 ,  H01L21/76254

Abstract: An NCFET transistor comprises a semiconductor-on-insulator substrate for a field-effect transistor, and the NCFET transistor successively comprises, from its base to its surface: a semiconductor carrier substrate; a single ferroelectric layer, arranged in direct contact with the carrier substrate, which layer is designed to be biased so as to form a negative capacitance; and an active layer of a semiconductor material, which layer is designed to form the channel of the transistor, and is arranged in direct contact with the ferroelectric layer. The NCFET transistor further comprises a channel that is arranged in the active layer, a source and a drain that are arranged in the active layer on either side of the channel, and a gate that is arranged on the channel and is insulated from the channel by a gate dielectric.