公开(公告)号：US20220076992A1

公开(公告)日：2022-03-10

申请号：US17417715

申请日：2019-12-23

Applicant: Soitec

Inventor： Yvan Morandini ,  Walter Schwarzenbach ,  Frédéric Allibert ,  Eric Desbonnets ,  Bich-Yen Nguyen

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/322 ,  H01L27/12 ,  H01L29/06

Abstract: A semiconductor-on-insulator multilayer structure, comprises: —a stack, called the back stack, of the following layers from a back side to a front side of the structure: a semiconductor carrier substrate the electrical resistivity of which is between 500 Ω·cm and 30 kΩ·cm, a first electrically insulating layer, a first semiconductor layer, —at least one trench isolation that extends through the back stack at least down to the first electrically insulating layer), and that electrically isolates two adjacent regions of the multilayer structure, the multilayer structure being characterized in that it further comprises at least one FD-SOI first region, and at least one RF-SOI second region.

公开(公告)号：US20220076993A1

公开(公告)日：2022-03-10

申请号：US17418117

申请日：2019-12-23

Applicant: Soitec

Inventor： Yvan Morandini ,  Walter Schwarzenbach ,  Frédéric Allibert ,  Eric Desbonnets ,  Bich-Yen Nguyen

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/322 ,  H01L27/12 ,  H01L29/06

Abstract: The present disclosure relates to a multilayer semiconductor-on-insulator structure, comprising, successively from a rear face toward a front face of the structure: a semiconductor carrier substrate with high electrical resistivity, whose electrical resistivity is between 500 Ω·cm and 30 kΩ·cm, a first electrically insulating layer, an intermediate layer, a second electrically insulating layer, which has a thickness less than that of the first electrically insulating layer, an active semiconductor layer, the multilayer structure comprises: at least one FD-SOI region, in which the intermediate layer is an intermediate first semiconductor layer, at least one RF-SOI region, adjacent to the FD-SOI region, in which the intermediate layer is a third electrically insulating layer, the RF-SOI region comprising at least one radiofrequency component plumb with the third electrically insulating layer.