公开(公告)号：US20250056858A1

公开(公告)日：2025-02-13

申请号：US18720416

申请日：2022-11-16

Applicant: Soitec ,  Soitec Belgium

Inventor： Christelle Veytizou ,  lonut Radu ,  Joff Derluyn ,  Stefan Degroote

IPC: H01L29/20 ,  H01L21/762 ,  H01L29/66 ,  H01L29/778

Abstract: A semiconductor structure includes a Silicon-On-Insulator substrate and an epitaxial III-N semiconductor layer stack on top of the Silicon-On-Insulator substrate. The Silicon-On-Insulator substrate has a silicon base layer, an intermediate layer on top of the base layer, and a n-type doped silicon top layer on top of the intermediate layer. The intermediate layer includes a trap-rich layer and a buried insulator on top of a trap-rich layer. The epitaxial III-N semiconductor layer stack, which is on top of the Silicon-On-Insulator substrate, includes a first active III-N layer and a second active III-N layer on top of the first active III-N layer. A two-dimensional Electron Gas is located between the first active III-N layer and the second active III-N layer.

公开(公告)号：US20240170284A1

公开(公告)日：2024-05-23

申请号：US18550044

申请日：2022-03-03

Applicant: Soitec

Inventor： Gweltaz Gaudin ,  Christophe Maleville ,  lonut Radu ,  Hugo Biard

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/32 ,  C23C16/56 ,  H01L21/762

CPC classification number: H01L21/02529 ,  C23C16/0227 ,  C23C16/325 ,  C23C16/56 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/76254

Abstract: A method for producing a semiconductor structure, comprises: a) providing a temporary substrate made of graphite having a grain size of between 4 microns and 35 microns, a porosity of between 6 and 17%, and a coefficient of thermal expansion of between 4×10-6/° C. and 5×10-6/° C.; b) depositing, on a front face of the temporary substrate, a carrier layer made of polycrystalline silicon carbide having a thickness of between 10 microns and 200 microns, c) transferring a working layer made of monocrystalline silicon carbide to the carrier layer to form a composite structure, the transfer implementing bonding by molecular adhesion, d) forming an active layer on the working layer, e) and removing the temporary substrate to form the semiconductor structure, the structure including the active layer, the working layer and the carrier layer. A composite structure is obtained in an intermediate step of the production method.