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公开(公告)号：US20180175099A1
公开(公告)日：2018-06-21
申请号：US15835791
申请日：2017-12-08
Applicant: Sony Corporation
Inventor： Itaru Oshiyama , Yuki Miyanami , Susumu Hiyama , Kazuki Tanaka
IPC: H01L27/146
CPC classification number: H01L27/14683 , H01L27/1463
Abstract: A solid-state imaging device includes a sensor including an impurity diffusion layer provided in a surface layer of a semiconductor substrate; and an oxide insulating film containing carbon, the oxide insulating film being provided on the sensor.
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公开(公告)号：US10361242B2
公开(公告)日：2019-07-23
申请号：US15835791
申请日：2017-12-08
Applicant: Sony Corporation
Inventor： Itaru Oshiyama , Yuki Miyanami , Susumu Hiyama , Kazuki Tanaka
IPC: H01L27/146
Abstract: A solid-state imaging device includes a sensor including an impurity diffusion layer provided in a surface layer of a semiconductor substrate; and an oxide insulating film containing carbon, the oxide insulating film being provided on the sensor.
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