公开(公告)号：US20200006411A1

公开(公告)日：2020-01-02

申请号：US16567620

申请日：2019-09-11

申请人： Sony Corporation

发明人： Shuji Manda ,  Susumu Hiyama ,  Yasuyuki Shiga

IPC分类号： H01L27/146 ,  H04N5/378

摘要： An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in the semiconductor substrate; and a fixed charge film provided on a light-receiving surface side of the semiconductor substrate, wherein the fixed charge film includes a first insulating film and a second insulating film, the first insulating film being provided contiguously from the light-receiving surface to a wall surface and a bottom surface of the pixel separation groove, and the second insulating film being provided on a part of the first insulating film, the part corresponding to at least the light-receiving surface.

公开(公告)号：US10192921B2

公开(公告)日：2019-01-29

申请号：US15667556

申请日：2017-08-02

申请人： Sony Corporation

发明人： Itaru Oshiyama ,  Takashi Ando ,  Susumu Hiyama ,  Tetsuji Yamaguchi ,  Yuko Ohgishi ,  Harumi Ikeda

IPC分类号： H01L27/146 ,  H01L27/148

摘要： A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

公开(公告)号：US20180175099A1

公开(公告)日：2018-06-21

申请号：US15835791

申请日：2017-12-08

申请人： Sony Corporation

发明人： Itaru Oshiyama ,  Yuki Miyanami ,  Susumu Hiyama ,  Kazuki Tanaka

IPC分类号： H01L27/146

CPC分类号： H01L27/14683 ,  H01L27/1463

摘要： A solid-state imaging device includes a sensor including an impurity diffusion layer provided in a surface layer of a semiconductor substrate; and an oxide insulating film containing carbon, the oxide insulating film being provided on the sensor.

公开(公告)号：US20180019271A1

公开(公告)日：2018-01-18

申请号：US15719097

申请日：2017-09-28

申请人： Sony Corporation

发明人： Susumu Hiyama ,  Kazufumi Watanabe

IPC分类号： H01L27/146

摘要： A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.

公开(公告)号：US20130234276A1

公开(公告)日：2013-09-12

申请号：US13865811

申请日：2013-04-18

申请人： SONY CORPORATION

发明人： Susumu Hiyama ,  Kazufumi Watanabe

IPC分类号： H01L27/146

CPC分类号： H01L27/1462 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643

摘要： A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.

摘要翻译： 一种固体摄像器件，包括：包含多个光电二极管的半导体层，位于所述半导体层的第一表面上的第一抗反射膜，位于所述第一抗反射膜上方的第二抗反射膜，具有相邻侧面的遮光层 到第一和第二抗反射膜中的至少一个。

公开(公告)号：US10529760B2

公开(公告)日：2020-01-07

申请号：US15719097

申请日：2017-09-28

申请人： Sony Corporation

发明人： Susumu Hiyama ,  Kazufumi Watanabe

IPC分类号： H01L27/146

摘要： A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.

公开(公告)号：US20170243904A1

公开(公告)日：2017-08-24

申请号：US15591255

申请日：2017-05-10

申请人： Sony Corporation

发明人： Susumu Hiyama ,  Kazufumi Watanabe

IPC分类号： H01L27/146

CPC分类号： H01L27/1462 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643

摘要： A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.

公开(公告)号：US09601539B2

公开(公告)日：2017-03-21

申请号：US15084906

申请日：2016-03-30

申请人： Sony Corporation

发明人： Susumu Hiyama ,  Kazufumi Watanabe

IPC分类号： H01L27/146

CPC分类号： H01L27/1462 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643

摘要： A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.

公开(公告)号：US20170040359A1

公开(公告)日：2017-02-09

申请号：US15299220

申请日：2016-10-20

申请人： Sony Corporation

发明人： Shuji Manda ,  Susumu Hiyama ,  Yasuyuki Shiga

IPC分类号： H01L27/146 ,  H04N5/378

CPC分类号： H01L27/1463 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/378

摘要： An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in the semiconductor substrate; and a fixed charge film provided on a light-receiving surface side of the semiconductor substrate, wherein the fixed charge film includes a first insulating film and a second insulating film, the first insulating film being provided contiguously from the light-receiving surface to a wall surface and a bottom surface of the pixel separation groove, and the second insulating film being provided on a part of the first insulating film, the part corresponding to at least the light-receiving surface.

摘要翻译： 图像拾取元件包括：半导体衬底，包括用于每个像素的光电转换部分; 设置在所述半导体基板中的像素分离槽; 以及设置在所述半导体基板的受光面侧的固定电荷膜，其中，所述固定电荷膜包括第一绝缘膜和第二绝缘膜，所述第一绝缘膜从所述受光面附近设置到壁 表面和像素分隔槽的底表面，并且第二绝缘膜设置在第一绝缘膜的一部分上，该部分至少对应于光接收表面。

公开(公告)号：US20150091121A1

公开(公告)日：2015-04-02

申请号：US14491375

申请日：2014-09-19

申请人： Sony Corporation

发明人： Shuji Manda ,  Susumu Hiyama ,  Yasuyuki Shiga

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/378

摘要： An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in the semiconductor substrate; and a fixed charge film provided on a light-receiving surface side of the semiconductor substrate, wherein the fixed charge film includes a first insulating film and a second insulating film, the first insulating film being provided contiguously from the light-receiving surface to a wall surface and a bottom surface of the pixel separation groove, and the second insulating film being provided on a part of the first insulating film, the part corresponding to at least the light-receiving surface.

摘要翻译： 图像拾取元件包括：半导体衬底，包括用于每个像素的光电转换部分; 设置在所述半导体基板中的像素分离槽; 以及设置在所述半导体基板的受光面侧的固定电荷膜，其中，所述固定电荷膜包括第一绝缘膜和第二绝缘膜，所述第一绝缘膜从所述受光面附近设置到壁 表面和像素分隔槽的底表面，并且第二绝缘膜设置在第一绝缘膜的一部分上，该部分至少对应于光接收表面。